|
tlp185gb-tpl.e[o
|
Toshiba Semiconductor
|
2
|
2,01
|
29.10.2024 11:17:09
|
|
|
|
tlp185gb-tpl.se[t
|
Toshiba Semiconductor
|
1
|
5,23
|
29.10.2024 11:17:09
|
|
|
|
TLP181(GB,F,T) Toshiba
|
|
18
|
3,92
|
27.09.2024 9:45:49
|
|
|
|
ADTL2-18
|
|
1
|
25,14
|
26.09.2024 15:42:57
|
|
|
|
TL494CN (КР1114ЕУ4) (18г)
|
|
336
|
13,07
|
26.09.2024 15:42:57
|
|
|
|
TLP182(GB-TPL,E
|
|
3000
|
4,04
|
26.09.2024 15:40:20
|
|
|
|
TLP183(GB-TPL,E(T
|
|
2800
|
1,57
|
26.09.2024 15:40:20
|
|
|
|
TLV70218DBVR
|
|
1350
|
2,63
|
26.09.2024 15:40:20
|
|
|
|
2SB1182TLQ
|
транзистор (ROHM, Medium power transistor, 32V, 2A, TO-252-3)
|
5
|
2,21
|
26.09.2024 15:22:21
|
|
|
|
IS42S16400J-7TLI (2017, 2018г.)
|
Микросхема (ISSI - 1M x 16 x 4 Banks, 64Mb Synchronous DRAM, tsop-54)
|
922
|
19,91
|
26.09.2024 15:22:21
|
|
|
|
LM3691 TL-1.8/NOPB
|
б/г TI б/уп
|
15
|
0,00
|
26.09.2024 15:21:21
|
|
|
|
LM3691 TL-1.8/NOPB
|
б/г TI б/уп
|
|
0,00
|
26.09.2024 15:21:21
|
|
|
|
TLE4470G 5V180/350mA
|
б/г Intineon DSO-20-6 б/уп
|
40
|
0,00
|
26.09.2024 15:21:21
|
|
|
|
TLE4470G 5V180/350mA
|
б/г Intineon DSO-20-6 б/уп
|
|
0,00
|
26.09.2024 15:21:21
|
|
|
|
2SD1802S-TL-E
|
б/г ONS D-PAK кат. 700
|
3503
|
0,00
|
26.09.2024 15:21:21
|
|
|
|
2SD1802S-TL-E npn 3A 50V 15W hFE= 100-560
|
б/г ONS D-PAK кат. 700
|
|
2,51
|
26.09.2024 15:21:21
|
|
|
|
AD711AQ прецизионный ОУ ±4.5...±18V settles to 0.01% in 1.0mks
|
05 AD DIP-8 линейка [50
|
32
|
35,19
|
26.09.2024 15:21:21
|
|
|
|
AD711AQ прецизионный ОУ ±4.5...±18V settles to 0.01% in 1.0mks
|
09 AD CDIP-8 линейка
|
1
|
35,19
|
26.09.2024 15:21:21
|
|
|
|
TLP180GB
|
б/г Fairchild MSO-4 катушка
|
200
|
3,52
|
26.09.2024 15:21:21
|
|
|
|
TLP181
|
07 Toshiba SO-4 лин. 150
|
40
|
1,51
|
26.09.2024 15:21:21
|
|
|
