|
13213 \SMD49S4\S\ 10\ 20/-40~85C\49S-SMD\1Г
|
SDE T/R (SDE13.213SerE)
|
300
|
3,02
|
02.04.2026 14:25:50
|
|
|
|
53215 \SMD06035C4\S\\\SMD6035-04\бм
|
|
189
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
8000 \HC49S2\32\ 15\\HC49SS[MEC]\1Г бм
|
более низкий корпус h=2,5мм
|
1
|
2,27
|
02.04.2026 14:25:50
|
|
|
|
36130 \HC49S3\32\ 10\ 50/-40~85C\49S[SDE]\3Г +IS
|
SDE (S36.130)(лазер)
|
94
|
2,27
|
02.04.2026 14:25:50
|
|
|
|
36130 \HC49S3\32\ 10\ 50/-40~85C\49S[SDE]\3Г +IS
|
SDE (36.13L32) (лазер)
|
995
|
2,27
|
02.04.2026 14:25:50
|
|
|
|
3932,16 \HC49U\S\\\SA[SUNNY]\1Г +SL (SUNNY)
|
(3.9321 SUNNY SER 95-15(A))
|
763
|
5,29
|
02.04.2026 14:25:50
|
|
|
|
42950 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\3Г +IS
|
(42.950ML32E) [14316~14333к]1Г
|
155
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
46315 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\3Г +IS
|
SDE (SDE46.315ML32E)
|
1000
|
5,29
|
02.04.2026 14:25:50
|
|
|
|
4864 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\1Г +IS
|
SDE (SDE 4.864L32E)
|
134
|
2,27
|
02.04.2026 14:25:50
|
|
|
|
49000 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\3Г +IS
|
SDE (49,000L32E)[16326~16330к]1Г
|
120
|
5,29
|
02.04.2026 14:25:50
|
|
|
|
49496 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\3Г +IS
|
SDE (SDE49.496L32E)
|
120
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
49560 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\3Г +IS
|
(49.560ML32E) [16515~16519к]1Г
|
160
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
49565 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\3Г +IS
|
(49.565ML32E) [16520~16525к]1Г
|
160
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
49570 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\3Г +IS
|
(49.570ML32E) [16517~16522к]1Г
|
155
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
49575 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\3Г +IS
|
(49.575ML32E) [16518~16526к]1Г
|
160
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
49580 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\3Г +IS
|
(49.580ML32E) [16519~16528к]1Г
|
150
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
49585 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\3Г +IS
|
(49.585ML32E) [16523~16530к]1Г
|
160
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
49590 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\3Г +IS
|
(49.590ML32E) [16525~16537к]1Г
|
160
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
49595 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\3Г +IS
|
(49.595ML32E) [16527~16532к]1Г
|
160
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
58000 \HC49S3\32\ 10\ 30/-40~85C\49S[SDE]\3Г +IS
|
SDE (58.000L32E)[19331~19335к]1Г
|
188
|
11,33
|
02.04.2026 14:25:50
|
|
|