|
SI2301BDS
|
VISHAY SOT-23
|
|
3,82
|
21.01.2026 9:16:16
|
|
|
|
Si2301BDS
|
Vishay SOT-23
|
|
3,32
|
21.01.2026 9:16:16
|
|
|
|
SI2301BDS (L1***)
|
VISHAY SOT-23
|
|
3,82
|
21.01.2026 9:16:16
|
|
|
|
Si2301BDS-T1
|
VISHAY SOT23-3
|
|
1,41
|
21.01.2026 9:16:16
|
|
|
|
SI2301
|
Транзисторы полевые
|
22945
|
0,11
|
16.01.2026 14:26:41
|
|
|
|
SI2301DS-T1-E3
|
(VISHAY- P-Channel 1.25-W, 2.5-V MOSFET, sot-23) транзистор
|
8
|
0,50
|
16.01.2026 14:19:17
|
|
|
|
SI2301BDS-T1-E3
|
микросхема L1*** SOT23 Vishay
|
4
|
6,03
|
16.01.2026 14:09:17
|
|
|
|
SI2301DS
|
микросхема A1SHB SOT23 Vishay
|
74
|
2,51
|
16.01.2026 14:09:17
|
|
|
|
SI2301DS ( A1SHB )
|
SOT-23 P-Channel 1.25-W, 2.5-V MOSFET
|
+
|
2,41
|
16.01.2026 14:01:09
|
|
|
|
SI2301DS (A1SHB) транзисторы
|
Vishay/IR SOT23
|
|
|
16.01.2026 13:35:03
|
|
|
|
SI2301BDS Vishay
|
транзистор
|
47
|
6,53
|
16.01.2026 13:21:47
|
|
|
|
SI2301BDS
|
VISHAY SOT-23
|
|
3,62
|
02.10.2025 12:41:39
|
|
|
|
SI2301BDS (L1***)
|
VISHAY SOT-23
|
|
3,62
|
02.10.2025 12:41:39
|
|
|
|
Si2301BDS-T1
|
VISHAY SOT23-3
|
|
1,31
|
02.10.2025 12:41:39
|
|
|
|
SI2301
|
ТРАНЗИСТОРЫ
|
1450
|
0,15
|
20.01.2025 11:12:37
|
|
|
|
SI2301BDS-T1
|
VISHAY
|
|
|
06.10.2021 15:12:07
|
|
|
