2SC3303 DPAK TO252 Toshiba
|
|
56
|
15,08
|
26.04.2024 12:23:42
|
|
|
GT30F133 DPAK TO252 Toshiba
|
|
45
|
13,27
|
26.04.2024 12:23:42
|
|
|
ЧИП тантал конденсатор 33mFx25V D 10%,Vishay
|
|
427
|
9,45
|
26.04.2024 12:23:42
|
|
|
конденсатор BFC233666103 (10n, ~250V, VISHAY) (2008г.)
|
(Interference Suppression Film Capacitors MKP Radial Potted Type)
|
1949
|
2,65
|
27.03.2024 14:27:48
|
|
|
NAND08GW3B2CN6E FLASH MEMORIES PARALLEL 3V/3.3V 8G-BIT 1GX8 25US
|
б/г STM TSO-48 з/уп
|
99
|
100,04
|
12.01.2024 12:12:29
|
|
|
ECAP 3300/25V 1625 SH 105C (KSH338M025S1A5M25K)
|
Teapo
|
85
|
3,02
|
12.01.2024 12:12:29
|
|
|
СП3-38Б-0.125 1 КОМ (SH-855MC)
|
2004г
|
20
|
0,26
|
12.01.2024 12:09:07
|
|
|
ECAP 3300/25v 1625 SH 105C (KSH338M025S1A5M25K)
|
Teapo
|
85
|
2,21
|
04.10.2023 12:31:31
|
|
|
СП3-38б-0.125 1 кОм (SH-855MC)
|
РЕЗИСТОРЫ - ПЕРЕМЕННЫЕ - СП3 прочие 04
|
20
|
0,12
|
04.10.2023 9:51:55
|
|
|
К50-35-33 мкф-400В 1325 105C (KSH336M400S1A5L25K) Конденсатор
|
Teapo
|
1
|
3,42
|
19.09.2023 11:01:19
|
|
|
NAND08GW3B2CN6E Flash memories Parallel 3V/3.3V 8G-bit 1Gx8 25us
|
б/г STM TSO-48 з/уп
|
99
|
95,52
|
18.04.2023 9:27:48
|
|
|
SH016M3300B7F-1625
|
|
17
|
4,77
|
29.03.2023 13:05:24
|
|
|
ECAP 3300-25V 1625 SH 105C (KSH338M025S1A5M25K)
|
|
71
|
3,89
|
29.03.2023 13:03:00
|
|
|
СП3-38Б-0,125 1КОМ (SH-855MC)
|
|
15
|
0,21
|
29.03.2023 13:01:29
|
|
|
NAND08GW3B2CN6E FLASH MEMORIES PARALLEL 3V-3,3V 8G-BIT 1GX8 25US
|
|
74
|
139,85
|
29.03.2023 12:59:50
|
|
|
SH-25-330
|
|
|
|
06.10.2021 15:13:12
|
|
|
SH-25-3300
|
|
|
|
06.10.2021 15:13:12
|
|
|
SH-25-330
|
YAGEO
|
|
|
06.10.2021 15:12:26
|
|
|
SH-250-33
|
YAGEO
|
|
|
06.10.2021 15:12:26
|
|
|
SH-25-33
|
YAGEO
|
|
|
06.10.2021 15:12:26
|
|
|