|
REF192ES
|
sop-8
|
6
|
11,56
|
12.01.2024 12:12:29
|
|
|
|
REF192ES/AD/S08-150
|
б.г росс
|
5
|
46,25
|
12.01.2024 12:12:29
|
|
|
|
МИКРОСХЕМЫ * REF192ESZ-REEL7
|
|
156
|
85,33
|
09.01.2024 12:20:08
|
|
|
|
REF192E SO8-150-1.27
|
2013
|
91
|
21,83
|
05.11.2021 10:46:14
|
|
|
|
REF192ESZ-REEL7
|
2019 Analog Devices
|
200
|
34,16
|
05.11.2021 10:46:14
|
|
|
|
REF192ES
|
|
|
|
06.10.2021 15:13:12
|
|
|
|
REF192ES
|
|
|
|
06.10.2021 15:13:12
|
|
|
|
REF192ESZ-REEL7
|
AD
|
|
|
06.10.2021 15:12:07
|
|
|
|
REF192ESZ-REEL
|
AD
|
|
|
06.10.2021 15:12:07
|
|
|
|
REF192ESZ
|
AD
|
|
|
06.10.2021 15:12:07
|
|
|
|
REF192ES-REEL7
|
AD
|
|
|
06.10.2021 15:12:07
|
|
|
|
REF192ES-REEL
|
AD
|
|
|
06.10.2021 15:12:07
|
|
|
|
REF192ES
|
AD
|
|
|
06.10.2021 15:12:07
|
|
|
|
REF192ES
|
AD
|
|
|
06.10.2021 15:12:07
|
|
|
|
REF192ES
|
AD
|
|
|
06.10.2021 15:12:07
|
|
|
|
Микросхемы
REF192ES
|
SO8 - ИОН, 2.5В+2мВ, 2ppm/°C, Iвых=30мА, SOIC8, -40°С:+85°C
|
есть
|
7,28
|
18.03.2010 16:13:17
|
|
|
