|
IRLML2502TRPBF
|
Fairchild SOT23
|
|
3,02
|
21.01.2026 9:16:16
|
|
|
|
IRLML 6402 TR PBF
|
б/г, на ленте
|
410
|
0,70
|
16.01.2026 14:40:54
|
|
|
|
IRLML2402TRPBF
|
Транзисторы полевые
|
3132
|
0,55
|
16.01.2026 14:26:41
|
|
|
|
IRLML2502TRPBF
|
Транзисторы полевые
|
11285
|
0,77
|
16.01.2026 14:26:41
|
|
|
|
IRLML6302TRPBF
|
Транзисторы полевые
|
15000
|
0,74
|
16.01.2026 14:26:41
|
|
|
|
IRLML6402TRPBF
|
Транзисторы полевые
|
7350
|
0,69
|
16.01.2026 14:26:41
|
|
|
|
IRLML2402TRPBF (97г.)
|
(N-Ch HEXFET®Power MOSFET, Vdss=20v, Rds(on)=0.25Ohm, Id=1.2a, sot23) транзистор
|
1660
|
1,01
|
16.01.2026 14:19:17
|
|
|
|
IRLML2502TRPBF (2013г.)
|
(IR - HEXFET®Power MOSFET, Vdss=20V, Rds(on)=0.045Ohm, Micro3™) транзистор
|
35
|
0,80
|
16.01.2026 14:19:17
|
|
|
|
IRLML6302TRPBF (sot-23) (2011г.)
|
(IR - HEXFET® Power MOSFET, Vdss=-20V, Rds(on)=0.6Ohm, Micro3™Case) транзистор
|
1440
|
0,90
|
16.01.2026 14:19:17
|
|
|
|
IRLML6302TRPBF (sot-23) (2014г.)
|
(IR - HEXFET® Power MOSFET, Vdss=-20V, Rds(on)=0.6Ohm, Micro3™Case) транзистор
|
585
|
0,90
|
16.01.2026 14:19:17
|
|
|
|
IRLML6302TRPBF MOSFET P-CH 20V 780mA
|
IR SOT-23
|
292
|
0,50
|
16.01.2026 14:15:59
|
|
|
|
IRLMS2002TRPBF
|
13 IR TSOP-6
|
194
|
1,81
|
16.01.2026 14:15:59
|
|
|
|
IRLMS2002TRPBF
|
IR TSOP-6
|
138
|
1,81
|
16.01.2026 14:15:59
|
|
|
|
IRLMS6802TRPBF MOSFET P-CH 20V 5.6A
|
12 Infineon TSOP-6
|
119
|
1,21
|
16.01.2026 14:15:59
|
|
|
|
IRLML6302TRPBF
|
IR
3000
|
4772
|
0,00
|
16.01.2026 14:15:59
|
|
|
|
IRLMS2002TRPBF
|
транзистор G**** SOT23-6 IR
|
105
|
9,55
|
16.01.2026 14:09:17
|
|
|
|
IRLML2502TR PBF (IRLML2502TRPBF) (1G, G7)
|
SOT-23 (TO-236 Micro3) N-Channel Id=4.2A Vss=20V Rds=0.045 Om 1.25W
|
+
|
2,31
|
16.01.2026 14:01:09
|
|
|
|
IRLML6302TR PBF (C1A,C8V)
|
SOT-23 (TO-236 Micro3) P-Channel Id=0,78A Idm=4.9A Vss=20V Rds=0,60 Om_Micro3 -SOT-23
|
+
|
2,01
|
16.01.2026 14:01:09
|
|
|
|
irlml2402trpbf
|
Infineon Technologies
|
133
|
1,01
|
16.01.2026 13:56:45
|
|
|
|
irlml6302trpbf
|
Infineon Technologies
|
295
|
3,02
|
16.01.2026 13:56:45
|
|
|
