|
MJD45H11T-4G
|
16 ТО-252 лента
|
60
|
0,00
|
28.04.2026 9:49:19
|
|
|
|
MJD45H11T4G pnp 80V 8A 20W
|
ON D-PAK бобина 2500
|
5388
|
2,01
|
28.04.2026 9:49:19
|
|
|
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`MJD45H11T4G
|
2025 JSMSEMI 50
|
1 850
|
2,13
|
28.04.2026 9:49:19
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|
|
|
MJD45H11
|
|
92
|
11,06
|
27.04.2026 10:34:53
|
|
|
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MJD45H11G
|
|
26
|
14,08
|
27.04.2026 10:34:53
|
|
|
|
MJD45H11
|
|
2
|
35,19
|
27.04.2026 10:34:53
|
|
|
|
MJD45H11T4G
|
|
134
|
5,53
|
27.04.2026 10:34:53
|
|
|
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транзистор MJD45H11G
|
|
69
|
5,14
|
17.04.2026 8:48:08
|
|
|
|
mjd45h11t4g
|
|
40
|
1,81
|
14.04.2026 15:28:31
|
|
|
|
MJD45H11
|
|
5
|
10,07
|
02.04.2026 13:34:31
|
|
|
|
MJD45H11T-4G
|
|
45
|
0,01
|
02.04.2026 13:34:31
|
|
|
|
MJD45H11T4G PNP 80V 8A 20W
|
|
4041
|
3,05
|
02.04.2026 13:34:31
|
|
|
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MJD45H11T4G
|
Транзисторы биполярные
|
1850
|
2,17
|
16.01.2026 14:26:41
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|
|
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MJD45H11 (DPAK для драйв.IGBT)
|
|
|
|
06.10.2021 15:13:12
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|
|
|
MJD45H11G
|
ONS
|
|
|
06.10.2021 15:12:07
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|
|
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MJD45H11G
|
ONS
|
|
|
06.10.2021 15:12:07
|
|
|
|
MJD45H11T4G
|
FAIR
|
|
|
06.10.2021 15:12:07
|
|
|
