|
MJ11016G
|
ONS TO3
|
|
50,17
|
02.10.2025 12:41:39
|
|
|
|
MJ11016G
|
ON S TO3
|
|
46,35
|
02.10.2025 12:41:39
|
|
|
|
MJ11016 (G)
|
TO-3 (TO-204) NPN Darlington, 120V, 30A, 200W
|
+
|
13,77
|
01.10.2025 13:46:32
|
|
|
|
MJ11016G транзисторы
|
ON S TO3
|
|
|
01.10.2025 13:31:31
|
|
|
|
MJ11016 (G)
|
TO-3 (TO-204) NPN Darlington, 120V, 30A, 200W
|
|
15,08
|
22.01.2025 12:42:28
|
|
|
|
MJ 11016G
|
ON S TO3 NPN, 120 В, 30 А, 200 Вт,
|
|
|
17.01.2025 14:19:28
|
|
|
|
MJ 11016G orig.
|
ON S TO3 NPN, 120 В, 30 А, 200 Вт,
|
|
|
17.01.2025 14:19:28
|
|
|
|
MJ11016G (2SD1460)
|
2014г
|
9
|
63,34
|
12.01.2024 12:12:29
|
|
|
|
MJ11016G
|
ONS
|
|
|
06.10.2021 15:12:07
|
|
|
|
MJ11016G
|
ONS
|
|
|
06.10.2021 15:12:07
|
|
|
|
Транзисторы биполярные (BJTs)
MJ11016G, Биполярный транзистор, NPN, составной (Darlington), 120 В, 30 А, 200 Вт, [TO-3]
|
ON Semiconductor
|
|
14,60
|
05.04.2018 11:56:50
|
|
|
