|
MF-200-2-51К
|
б/г, на ленте
|
258
|
0,02
|
12.06.2026 10:49:22
|
|
|
|
MF-0,25 200 Ом 5%
|
импорт
|
700
|
0,06
|
11.05.2026 11:04:26
|
|
|
|
MF-0,25 620 Ом 1%
|
импорт
|
695
|
0,06
|
11.05.2026 11:04:26
|
|
|
|
MF-0,125-220 Ом 5% имп.резистор
|
02:467
|
467
|
14,08
|
11.05.2026 9:34:47
|
|
|
|
MFR-0,25-120 Ом-1% 50ppm (MFR-25FTF52-120R)
|
резистор (YAGEO - Metal Film Resistor)
|
4000
|
0,60
|
29.04.2026 13:59:53
|
|
|
|
TSX-3225-16.0000MF09Z-AC3-16000,0 кГц (3.2x2.5x0.6mm) (2014г.)
|
(EPSON - MHz Range Crystal Unit Miniature Size Low Profile SMD)
|
791
|
4,23
|
29.04.2026 13:59:53
|
|
|
|
C0805-Y5V-50V-2,2 мкФ-(+80-20)% (GRM21MF51H225ZA01L)
|
конденсатор SMD (Murata)
|
2548
|
0,60
|
29.04.2026 13:59:53
|
|
|
|
LMX2325TMF (sop-20)
|
Микросхема (NS - Frequency Synthesizer for RF Personal Communications, 2.5GHz)
|
58
|
32,77
|
29.04.2026 13:59:53
|
|
|
|
S25FL127SABMFI101 (2017г.)
|
Микросхема (Spansion - NOR Flash Serial-SPI 3V/3.3V 128M-bit 16M x 8 8ns, so-8)
|
20
|
22,65
|
29.04.2026 13:59:53
|
|
|
|
S25FL512SAGMFV011 (2012г.)
|
Микросхема (Spansion - IC FLASH 512Mbit CMOS SPI, so-16)
|
10
|
90,62
|
29.04.2026 13:59:53
|
|
|
|
UB-20PMFP-SC8001 (2020...2025г.)
|
Разъём (Amphenol LTW - гнездо USB-B прямое, на панель, THT, USB 2.0, IP68)
|
1680
|
83,07
|
29.04.2026 13:59:53
|
|
|
|
0,25/2002 G2 0,25mF 2kV
|
1977 Hydra
|
1
|
22,12
|
28.04.2026 16:22:22
|
|
|
|
MF72-5D20
|
KLS
|
|
9,55
|
28.04.2026 12:23:49
|
|
|
|
1206 X7R-25V-4,7 mF 10% - (4.7 uF)
|
15 HOTTECH 2000
|
4000
|
0,00
|
28.04.2026 9:49:19
|
|
|
|
B37951K5105M62 50V 20% 1.0mF
|
б/г EPCOS б/уп
|
1112
|
1,21
|
28.04.2026 9:49:19
|
|
|
|
MF-RX012/250-0 самовост. пред. 120мА 60В
|
б/г Bourns 500
|
639
|
1,51
|
28.04.2026 9:49:19
|
|
|
|
С2-33М-0,25-200 Ом 5% (MF)
|
20 Россия 500
|
400
|
0,10
|
28.04.2026 9:49:19
|
|
|
|
`KIT-MF-025-1-3120-156
|
2025 RUICHI 1
|
8
|
93,81
|
28.04.2026 9:49:19
|
|
|
|
MFR-0,25-120 ОМ-5% Резистор
|
|
32
|
0,40
|
27.04.2026 13:36:48
|
|
|
|
MF-0,125-200 ОМ-1% Резистор
|
YAGEO
|
1
|
0,30
|
27.04.2026 13:36:48
|
|
|
