|
IRLR2705 (2000г.)
|
транзистор (IR - N-Ch HEXFET®Power MOSFET, Vdss=55V, Rds(on)=0.04Ohm, 28A, D-Pak)
|
300
|
2,54
|
28.10.2026 12:25:44
|
|
|
|
IRLR2705 (2005г.)
|
транзистор (IR - N-Ch HEXFET®Power MOSFET, Vdss=55V, Rds(on)=0.04Ohm, 28A, D-Pak)
|
84
|
2,54
|
28.10.2026 12:25:44
|
|
|
|
IRLR2705 (2007г.)
|
транзистор (IR - N-Ch HEXFET®Power MOSFET, Vdss=55V, Rds(on)=0.04Ohm, 28A, D-Pak)
|
12
|
2,54
|
28.10.2026 12:25:44
|
|
|
|
IRLR2705PBF MOSFET N-Ch 55V 28A 0.040 Om
|
14 IR TO-252 75
|
75
|
2,54
|
28.10.2026 11:24:15
|
|
|
|
IRLR2705PBF MOSFET N-Ch 55V 28A 0.040 Om
|
IR TO-252 75
|
77
|
2,54
|
28.10.2026 11:24:15
|
|
|
|
IRLR2705
|
DPAK / TO252 IRLR2905 транзистор
|
76
|
13,20
|
14.10.2026 12:14:57
|
|
|
|
IRLR2705 транзисторы
|
IR TO252 (DPAK)
|
|
|
07.10.2026 10:08:55
|
|
|
|
Транзистор полевой IRLR2705TRPBF
|
Infineon
|
30
|
2,90
|
20.07.2026 14:18:28
|
|
|
|
IRLR2705 (2000г.)
|
(IR - N-Ch HEXFET®Power MOSFET, Vdss=55V, Rds(on)=0.04Ohm, 28A, D-Pak)
|
300
|
2,54
|
13.07.2026 10:58:09
|
|
|
|
IRLR2705 (2005г.)
|
(IR - N-Ch HEXFET®Power MOSFET, Vdss=55V, Rds(on)=0.04Ohm, 28A, D-Pak)
|
84
|
2,54
|
13.07.2026 10:58:09
|
|
|
|
IRLR2705 (2007г.)
|
(IR - N-Ch HEXFET®Power MOSFET, Vdss=55V, Rds(on)=0.04Ohm, 28A, D-Pak)
|
12
|
2,54
|
13.07.2026 10:58:09
|
|
|
|
IRLR2705 TO251
|
IR
|
|
11,78
|
09.07.2026 12:38:13
|
|
|
|
IRLR2705PBF TO-252
|
INFIN
|
|
9,34
|
09.07.2026 12:38:13
|
|
|
|
IRLR2705 транзисторы IR TO252 (DPAK)
|
|
|
|
14.04.2026 16:28:46
|
|
|
|
IRLR2705
|
|
6
|
12,95
|
02.04.2026 13:34:31
|
|
|
|
IRLR2705PBF MOSFET N-CH 55V 28A 0,040 OM
|
|
63
|
3,85
|
02.04.2026 13:34:31
|
|
|
|
IRLR2705PBF MOSFET N-CH 55V 28A 0,040 OM
|
|
56
|
3,85
|
02.04.2026 13:34:31
|
|
|
|
IRLR2705PBF
|
2014г IR ТО-252 75
|
75
|
|
12.01.2024 12:12:29
|
|
|
|
IRLR2705
|
VISH/IR
|
|
|
06.10.2021 15:12:07
|
|
|
|
IRLR2705
|
VISH/IR
|
|
|
06.10.2021 15:12:07
|
|
|
