|
Транзистор полевой IRLML6302TRPBF
|
Infineon
|
3972
|
0,54
|
20.07.2026 14:18:28
|
|
|
|
IRLML6302TR
|
17
|
5
|
1,83
|
13.07.2026 13:14:54
|
|
|
|
IRLML6302TRPBF (sot-23) (2011г.)
|
(IR - HEXFET® Power MOSFET, Vdss=-20V, Rds(on)=0.6Ohm, Micro3™Case)
|
1440
|
0,91
|
13.07.2026 10:58:09
|
|
|
|
IRLML6302TRPBF (sot-23) (2014г.)
|
(IR - HEXFET® Power MOSFET, Vdss=-20V, Rds(on)=0.6Ohm, Micro3™Case)
|
585
|
0,91
|
13.07.2026 10:58:09
|
|
|
|
`IRLML6302TR
|
2023 UMW Youtai Semiconductor
|
2000
|
3416,36
|
10.07.2026 12:34:44
|
|
|
|
`IRLML6302TRPBF
|
2021 Infineon Technologies
|
15000
|
4507,54
|
10.07.2026 12:34:44
|
|
|
|
IRLML6302TRPBF MOSFET P-CH 20V 780mA
|
IR 3000
|
4772
|
0,51
|
10.07.2026 12:32:33
|
|
|
|
IRLML6302TRPBF MOSFET P-CH 20V 780mA
|
IR SOT-23
|
242
|
0,51
|
10.07.2026 12:32:33
|
|
|
|
IRLML6302TR PBF (C1A,C8V)
|
SOT-23 (TO-236 Micro3) P-Channel Id=0,78A Idm=4.9A Vss=20V Rds=0,60 Om_Micro3 -SOT-23
|
+
|
2,03
|
07.07.2026 10:35:26
|
|
|
|
irlml6302trpbf
|
Infineon Technologies
|
295
|
3,05
|
07.07.2026 9:05:01
|
|
|
|
транз IRLML6302TR \\\SOT-23-3\I R
|
Транзисторы
|
35
|
5,59
|
06.07.2026 11:10:46
|
|
|
|
IRLML6302TRPBF
|
|
3579
|
0,01
|
02.04.2026 13:34:31
|
|
|
|
IRLML6302TRPBF MOSFET P-CH 20V 780MA
|
|
212
|
0,77
|
02.04.2026 13:34:31
|
|
|
|
IRLML6302TR
|
Транзисторы полевые
|
2000
|
0,30
|
16.01.2026 14:26:41
|
|
|
|
IRLML6302TRPBF
|
Транзисторы полевые
|
15000
|
0,74
|
16.01.2026 14:26:41
|
|
|
|
IRLML6302TRPBF
|
ТРАНЗИСТОРЫ
|
15000
|
0,95
|
20.01.2025 11:12:37
|
|
|
|
IRLML6302TR
|
ТРАНЗИСТОРЫ
|
2000
|
0,39
|
20.01.2025 11:12:37
|
|
|
|
IRLML6302TR
|
2017г
|
5
|
3,76
|
12.01.2024 12:12:29
|
|
|
|
IRLML6302TRPBF MOSFET P-CH 20V 780MA
|
б/г IR SOT-23 3000, б/уп
|
326
|
0,61
|
12.01.2024 12:12:29
|
|
|
|
IRLML6302TR
|
VISH/IR
|
|
|
06.10.2021 15:12:07
|
|
|
