|
IRFB4410PBF (2014г.)
|
транзистор (IR-HEXFET® Power MOSFET, Vdss=10V, Id=96A, Rds(on)=0.008Ohm, TO-220)
|
371
|
15,10
|
29.04.2026 13:59:53
|
|
|
|
IRFB4410
|
IR TO220
|
|
14,18
|
28.04.2026 12:23:49
|
|
|
|
`IRFB4410Z
|
2024 HXY 50
|
450
|
5,27
|
28.04.2026 9:49:19
|
|
|
|
IRFB4410Z PBF
|
|
30
|
17,60
|
27.04.2026 10:34:53
|
|
|
|
IRFB4410Z PBF
|
|
42
|
14,08
|
27.04.2026 10:34:53
|
|
|
|
IRFB4410Z PBF
|
|
39
|
14,08
|
27.04.2026 10:34:53
|
|
|
|
IRFB4410 (FB4410Z,FB4410)
|
TO-220 N-channel 100V, 96A, 250W
|
|
21,52
|
15.04.2026 13:36:13
|
|
|
|
IRFB4410 транзисторы IR TO220AB
|
|
|
|
14.04.2026 16:28:46
|
|
|
|
транз IRFB4410 \\\TO-220AB\IR
|
Транзисторы
|
2
|
119,62
|
02.04.2026 14:25:21
|
|
|
|
IRFB4410Z
|
Транзисторы полевые
|
460
|
5,36
|
16.01.2026 14:26:41
|
|
|
|
Транзисторы/Транзисторы
IRFB4410Z
|
Код 117228 TO220AB Infineon Technologies
|
2
|
23,46
|
09.10.2025 12:27:35
|
|
|
|
IRFB4410Z
|
ТРАНЗИСТОРЫ
|
690
|
6,45
|
20.01.2025 11:12:37
|
|
|
