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Транзистор IRF7416
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International Rectifier более 50
|
|
8,60
|
11.08.2026 16:40:54
|
|
|
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Полевой транзистор IRF7416TRPBF
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Infineon
|
3026
|
3,06
|
20.07.2026 14:18:28
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|
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IRF7416PBF (2011г.)
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(IR - so-8, HEXFET® Power MOSFET, VDSS = -30V, RDS(on) = 0.02 Ohm)
|
3
|
2,23
|
13.07.2026 10:58:09
|
|
|
|
IRF7416PBF (2017г.)
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(Infineon - so-8, HEXFET® Power MOSFET, VDSS=-30V, RDS(on)=0.02Ohm)
|
446
|
2,23
|
13.07.2026 10:58:09
|
|
|
|
IRF7416TRPBF (2013г.)
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(IR - so-8, HEXFET® Power MOSFET, VDSS = -30V, RDS(on) = 0.02 Ohm)
|
288
|
2,23
|
13.07.2026 10:58:09
|
|
|
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IRF7416TRPBF (2017г.)
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(Infineon - so-8, HEXFET® Power MOSFET, VDSS=-30V, RDS(on)=0.02Ohm)
|
1101
|
2,23
|
13.07.2026 10:58:09
|
|
|
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Транзистор IRF7416
|
|
50
|
7,13
|
13.07.2026 10:55:11
|
|
|
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`IRF7416T
|
2024 HXY
|
100
|
2111,67
|
10.07.2026 12:34:44
|
|
|
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`IRF7416T
|
2023 HXY
|
350
|
2111,67
|
10.07.2026 12:34:44
|
|
|
|
`IRF7416T
|
2024 HXY
|
6000
|
2111,67
|
10.07.2026 12:34:44
|
|
|
|
`IRF7416T
|
2024 HXY
|
2900
|
2111,67
|
10.07.2026 12:34:44
|
|
|
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`IRF7416TRPBF
|
2022 Infineon Technologies
|
2025
|
3,83
|
10.07.2026 12:34:44
|
|
|
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IRF7416 SO8
|
IR
|
|
5,38
|
09.07.2026 12:38:13
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|
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транзистор IRF7416 SO-8
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IR
|
12
|
2,23
|
09.07.2026 12:34:10
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IRF7416
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SO8 IR
|
28
|
9,14
|
09.07.2026 11:22:01
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IRF7416 International Rectifier
|
|
12
|
2,54
|
06.07.2026 15:46:29
|
|
|
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IRF 7416 ( SOIC)
|
|
69
|
|
06.07.2026 11:28:34
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|
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транз IRF7416 \P\ 2,5\SO-8-150-1.27\
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Транзисторы
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16
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15,24
|
06.07.2026 11:10:46
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|
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IRF7416 транзисторы IR SO8
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|
|
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14.04.2026 16:28:46
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|
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IRF7416PBF Транзистор
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|
3
|
5,64
|
02.04.2026 13:38:19
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