|
IRF7416PBF (2011г.)
|
транзистор (IR - so-8, HEXFET® Power MOSFET, VDSS = -30V, RDS(on) = 0.02 Ohm)
|
3
|
2,23
|
28.10.2026 12:25:44
|
|
|
|
IRF7416PBF (2017г.)
|
транзистор (Infineon - so-8, HEXFET® Power MOSFET, VDSS=-30V, RDS(on)=0.02Ohm)
|
446
|
2,23
|
28.10.2026 12:25:44
|
|
|
|
IRF7416TRPBF (2013г.)
|
транзистор (IR - so-8, HEXFET® Power MOSFET, VDSS = -30V, RDS(on) = 0.02 Ohm)
|
288
|
2,23
|
28.10.2026 12:25:44
|
|
|
|
IRF7416TRPBF (2017г.)
|
транзистор (Infineon - so-8, HEXFET® Power MOSFET, VDSS=-30V, RDS(on)=0.02Ohm)
|
1101
|
2,23
|
28.10.2026 12:25:44
|
|
|
|
Транзистор IRF7416
|
|
50
|
7,13
|
28.10.2026 11:30:04
|
|
|
|
IRF7416T
|
2023 Транзисторы полевые Импорт
|
8750
|
1,52
|
28.10.2026 11:24:15
|
|
|
|
IRF7416TRPBF
|
2022 Транзисторы полевые Импорт
|
1525
|
4,56
|
28.10.2026 11:24:15
|
|
|
|
IRF7416T
|
|
8650
|
30,26
|
15.10.2026 14:29:29
|
|
|
|
IRF7416TRPBF
|
|
1525
|
90,84
|
15.10.2026 14:29:29
|
|
|
|
транзистор IRF7416 SO-8
|
IR
|
12
|
2,23
|
15.10.2026 14:26:23
|
|
|
|
IRF7416
|
SO8 IR транзистор
|
28
|
9,14
|
14.10.2026 12:14:57
|
|
|
|
IRF7416 транзисторы
|
IR SO8
|
|
|
07.10.2026 10:08:55
|
|
|
|
IRF 7416 ( SOIC)
|
|
69
|
|
07.10.2026 9:53:34
|
|
|
|
транз IRF7416 \P\ 2,5\SO-8-150-1.27\
|
Транзисторы
|
16
|
28,93
|
07.10.2026 9:48:51
|
|
|
|
IRF7416 International Rectifier
|
|
12
|
4,29
|
07.10.2026 9:46:51
|
|
|
|
Транзистор IRF7416
|
International Rectifier более 50
|
|
8,60
|
11.08.2026 16:40:54
|
|
|
|
Полевой транзистор IRF7416TRPBF
|
Infineon
|
3026
|
3,06
|
20.07.2026 14:18:28
|
|
|
|
IRF7416PBF (2011г.)
|
(IR - so-8, HEXFET® Power MOSFET, VDSS = -30V, RDS(on) = 0.02 Ohm)
|
3
|
2,23
|
13.07.2026 10:58:09
|
|
|
|
IRF7416PBF (2017г.)
|
(Infineon - so-8, HEXFET® Power MOSFET, VDSS=-30V, RDS(on)=0.02Ohm)
|
446
|
2,23
|
13.07.2026 10:58:09
|
|
|
|
IRF7416TRPBF (2013г.)
|
(IR - so-8, HEXFET® Power MOSFET, VDSS = -30V, RDS(on) = 0.02 Ohm)
|
288
|
2,23
|
13.07.2026 10:58:09
|
|
|
