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Транзистор IRF7416
|
International Rectifier
|
50
|
7,05
|
29.04.2026 14:07:34
|
|
|
|
IRF7416TRPBF (2017г.)
|
транзистор (Infineon - so-8, HEXFET® Power MOSFET, VDSS=-30V, RDS(on)=0.02Ohm)
|
1101
|
3,32
|
29.04.2026 13:59:53
|
|
|
|
IRF7416PBF (2011г.)
|
транзистор (IR - so-8, HEXFET® Power MOSFET, VDSS = -30V, RDS(on) = 0.02 Ohm)
|
3
|
3,32
|
29.04.2026 13:59:53
|
|
|
|
IRF7416PBF (2017г.)
|
транзистор (Infineon - so-8, HEXFET® Power MOSFET, VDSS=-30V, RDS(on)=0.02Ohm)
|
480
|
3,32
|
29.04.2026 13:59:53
|
|
|
|
IRF7416TRPBF (2013г.)
|
транзистор (IR - so-8, HEXFET® Power MOSFET, VDSS = -30V, RDS(on) = 0.02 Ohm)
|
388
|
3,32
|
29.04.2026 13:59:53
|
|
|
|
транзистор IRF7416 SO-8
|
IR
|
12
|
2,21
|
28.04.2026 16:22:22
|
|
|
|
IRF7416
|
IR SO8
|
|
5,33
|
28.04.2026 12:23:49
|
|
|
|
`IRF7416T
|
2024 HXY 50
|
100
|
2090,34
|
28.04.2026 9:49:19
|
|
|
|
`IRF7416T
|
2023 HXY 50
|
350
|
2090,34
|
28.04.2026 9:49:19
|
|
|
|
`IRF7416T
|
2024 HXY 3000
|
6 000
|
2090,34
|
28.04.2026 9:49:19
|
|
|
|
`IRF7416T
|
2024 HXY 100
|
2 900
|
2090,34
|
28.04.2026 9:49:19
|
|
|
|
`IRF7416TRPBF
|
2022 Infineon Technologies 25
|
2 025
|
3,79
|
28.04.2026 9:49:19
|
|
|
|
IRF7416
|
|
28
|
9,05
|
27.04.2026 10:34:53
|
|
|
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транзистор IRF7416 International Rectifier
|
|
12
|
4,94
|
17.04.2026 8:48:08
|
|
|
|
IRF7416 транзисторы IR SO8
|
|
|
|
14.04.2026 16:28:46
|
|
|
|
IRF 7416 ( SOIC)
|
|
69
|
|
14.04.2026 10:15:17
|
|
|
|
транз IRF7416 \P\ 2,5\SO-8-150-1.27\
|
Транзисторы
|
16
|
16,61
|
02.04.2026 14:25:21
|
|
|
|
IRF7416PBF Транзистор
|
|
3
|
5,58
|
02.04.2026 13:38:19
|
|
|
|
IRF7416
|
|
2
|
9,92
|
02.04.2026 13:34:31
|
|
|
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IRF7416T
|
Транзисторы полевые
|
9050
|
1,28
|
16.01.2026 14:26:41
|
|
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