|
IRF640N (КП 750 А)
|
24 ИМПОРТ - ПОЛУПРОВОДНИКИ Имп - Транзисторы Имп
|
13
|
5,03
|
04.05.2026 12:44:22
|
|
|
|
Транзистор КП767В IRF640N
|
International Rectifier
|
100
|
6,38
|
29.04.2026 14:07:34
|
|
|
|
Транзистор IRF640N
|
International Rectifier
|
100
|
6,38
|
29.04.2026 14:07:34
|
|
|
|
IRF640N (2001г.)
|
транзистор (IR - Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A), TO220AB)
|
1237
|
7,25
|
29.04.2026 13:59:53
|
|
|
|
IRF640N (2008г.)
|
транзистор (IR - Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A), TO220AB)
|
372
|
8,31
|
29.04.2026 13:59:53
|
|
|
|
IRF640NS (2005г.)
|
транзистор (IR - Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A), D2Pak)
|
599
|
4,53
|
29.04.2026 13:59:53
|
|
|
|
IRF640N
|
IR TO220
|
|
5,53
|
28.04.2026 12:23:49
|
|
|
|
IRF640N
|
б/г IR ТО-220 линейка
|
49
|
2,82
|
28.04.2026 9:49:19
|
|
|
|
IRF640NPBF
|
09 IR лин.50
|
269
|
2,01
|
28.04.2026 9:49:19
|
|
|
|
IRF640NPBF MOSFET N-Ch 200V 18A
|
б/г IR TO-220AB линейка 50, б/уп
|
5266
|
2,82
|
28.04.2026 9:49:19
|
|
|
|
IRF640NS (F640NS)
|
01 IR D2PAK 50
|
7801
|
2,51
|
28.04.2026 9:49:19
|
|
|
|
`IRF640N (JSMSEMI)
|
2024 JSMSEMI 39
|
39
|
2,55
|
28.04.2026 9:49:19
|
|
|
|
`IRF640N (JSMSEMI)
|
2025 JSMSEMI 20
|
1 260
|
2,55
|
28.04.2026 9:49:19
|
|
|
|
`IRF640N (JSMSEMI)
|
2024 JSMSEMI 38
|
38
|
2,55
|
28.04.2026 9:49:19
|
|
|
|
`IRF640N (JSMSEMI)
|
2024 JSMSEMI 28
|
28
|
2,55
|
28.04.2026 9:49:19
|
|
|
|
`IRF640NSTRLPBF
|
2022 Infineon Technologies 25
|
1 163
|
3,81
|
28.04.2026 9:49:19
|
|
|
|
IRF640N
|
|
224
|
12,57
|
27.04.2026 10:34:53
|
|
|
|
IRF640NS
|
|
111
|
16,09
|
27.04.2026 10:34:53
|
|
|
|
IRF640N
|
To220
|
1
|
2,01
|
23.04.2026 16:11:01
|
|
|
|
транзистор IRF640N
|
|
18
|
9,88
|
17.04.2026 8:48:08
|
|
|
