|
Транзистор IRF640N
|
International Rectifier более 100
|
|
7,78
|
11.08.2026 16:40:54
|
|
|
|
Транзистор КП767В IRF640N
|
International Rectifier более 100
|
|
7,78
|
11.08.2026 16:40:54
|
|
|
|
Транзистор IRF640NPBF
|
Infineon
|
1778
|
2,16
|
20.07.2026 14:18:28
|
|
|
|
IRF640N (КП 750 А)
|
24 РФ
|
13
|
5,08
|
13.07.2026 13:14:54
|
|
|
|
IRF640N (2001г.)
|
(IR - Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A), TO220AB)
|
1237
|
4,88
|
13.07.2026 10:58:09
|
|
|
|
IRF640N (2008г.)
|
(IR - Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A), TO220AB)
|
372
|
5,59
|
13.07.2026 10:58:09
|
|
|
|
IRF640NS (2005г.)
|
(IR - Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A), D2Pak)
|
599
|
3,05
|
13.07.2026 10:58:09
|
|
|
|
Транзистор КП767В IRF640N
|
|
100
|
6,44
|
13.07.2026 10:55:11
|
|
|
|
Транзистор IRF640N
|
|
100
|
6,44
|
13.07.2026 10:55:11
|
|
|
|
`IRF640N (JSMSEMI)
|
2024 JSMSEMI
|
39
|
2,58
|
10.07.2026 12:34:44
|
|
|
|
`IRF640N (JSMSEMI)
|
2025 JSMSEMI
|
1260
|
2,58
|
10.07.2026 12:34:44
|
|
|
|
`IRF640N (JSMSEMI)
|
2024 JSMSEMI
|
38
|
2,58
|
10.07.2026 12:34:44
|
|
|
|
`IRF640N (JSMSEMI)
|
2024 JSMSEMI
|
28
|
2,58
|
10.07.2026 12:34:44
|
|
|
|
`IRF640NSTRLPBF
|
2022 Infineon Technologies
|
1163
|
3,85
|
10.07.2026 12:34:44
|
|
|
|
IRF640NPBF
|
9 IR
|
269
|
2,03
|
10.07.2026 12:32:33
|
|
|
|
IRF640NPBF MOSFET N-Ch 200V 18A
|
IR TO-220AB
|
5266
|
2,84
|
10.07.2026 12:32:33
|
|
|
|
IRF640NS (F640NS)
|
1 IR D2PAK 50
|
7801
|
2,54
|
10.07.2026 12:32:33
|
|
|
|
IRF640N TO220
|
IR
|
|
5,59
|
09.07.2026 12:38:13
|
|
|
|
IRF640N
|
TO220 IR
|
222
|
12,70
|
09.07.2026 11:22:01
|
|
|
|
IRF640NS
|
F640NS D2PAK / TO263 IR
|
111
|
16,25
|
09.07.2026 11:22:01
|
|
|
