|
IRF610
|
Harris TO-220AB
|
|
7,24
|
21.01.2026 9:16:16
|
|
|
|
IRF610 TO-220
|
IR
|
50
|
4,12
|
16.01.2026 14:34:15
|
|
|
|
IRF610
|
транзистор TO220 IR
|
181
|
14,08
|
16.01.2026 14:09:17
|
|
|
|
IRF610
|
TO-220 N-Channel 200V, 3.3A, 36W
|
+
|
6,13
|
16.01.2026 14:01:09
|
|
|
|
IRF610 транзисторы
|
IR TO220
|
|
|
16.01.2026 13:35:03
|
|
|
|
транз IRF610 \\\TO-220+di\IR
|
Транзисторы
|
1
|
15,74
|
16.01.2026 13:23:32
|
|
|
|
Транзисторы/Транзисторы
IRF610
|
Код К27482 TO220AB Infineon Technologies
|
5
|
11,12
|
09.10.2025 12:27:35
|
|
|
|
IRF610
|
Harris TO-220AB
|
|
7,04
|
02.10.2025 12:41:39
|
|
|
|
IRF 610 TO-220
|
VISHAY
|
|
|
20.01.2025 10:53:11
|
|
|
|
IRF610L
|
IR
|
|
|
06.10.2021 15:12:07
|
|
|
|
IRF610PBF
|
IR
|
|
|
06.10.2021 15:12:07
|
|
|
|
IRF610
|
SAMSUNG
|
|
|
06.10.2021 15:12:07
|
|
|
|
IRF610
|
VISH/IR
|
|
|
06.10.2021 15:12:07
|
|
|
|
IRF610PBF
|
VISH/IR
|
|
|
06.10.2021 15:12:07
|
|
|
|
Транзисторы полевые (FETs, MOSFETs)
IRF610PBF, Транзистор, N-канал 200В 3.3А [TO-220AB]
|
Vishay
|
|
1,18
|
05.04.2018 11:56:50
|
|
|
