|
Транзистор IRF530
|
International Rectifier более 100
|
|
6,43
|
11.08.2026 16:40:54
|
|
|
|
Транзистор IRF5305
|
International Rectifier менее 10
|
|
12,04
|
11.08.2026 16:40:54
|
|
|
|
Транзистор КП745А IRF530
|
International Rectifier более 100
|
|
6,43
|
11.08.2026 16:40:54
|
|
|
|
Транзистор КП769Б IRF530
|
International Rectifier более 100
|
|
6,43
|
11.08.2026 16:40:54
|
|
|
|
Силовой транзистор IRF5305STRLPBF
|
Infineon
|
38
|
7,36
|
20.07.2026 14:18:28
|
|
|
|
Силовой транзистор IRF5305
|
JSMICRO
|
2
|
2,56
|
20.07.2026 14:18:28
|
|
|
|
IRF5305S
|
08
|
2
|
7,31
|
13.07.2026 13:14:54
|
|
|
|
IRF530
|
(STM- N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR, TO-220AB)
|
7
|
4,06
|
13.07.2026 10:58:09
|
|
|
|
IRF530 (98г.)
|
(MSC- N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR, TO-220AB)
|
3
|
3,56
|
13.07.2026 10:58:09
|
|
|
|
IRF5305P (2023г.)
|
(IR - HEXFET® Power MOSFET, P, -55V, -31A, TO-220AB)
|
30
|
6,60
|
13.07.2026 10:58:09
|
|
|
|
IRF530N (2008г.)
|
(IR - Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A,TO-220AB)
|
21
|
4,06
|
13.07.2026 10:58:09
|
|
|
|
Транзистор КП745А IRF530
|
|
100
|
5,33
|
13.07.2026 10:55:11
|
|
|
|
Транзистор КП769Б IRF530
|
|
100
|
5,33
|
13.07.2026 10:55:11
|
|
|
|
Транзистор IRF530
|
|
100
|
5,33
|
13.07.2026 10:55:11
|
|
|
|
Транзистор IRF5305
|
|
10
|
9,98
|
13.07.2026 10:55:11
|
|
|
|
`IRF5305
|
2024 JSMSEMI
|
200
|
3,27
|
10.07.2026 12:34:44
|
|
|
|
`IRF5305
|
2024 JSMSEMI
|
50
|
3,27
|
10.07.2026 12:34:44
|
|
|
|
`IRF5305PBF
|
2024 Infineon Technologies
|
940
|
4,83
|
10.07.2026 12:34:44
|
|
|
|
`IRF5305S
|
2024 JSMSEMI
|
259
|
4,09
|
10.07.2026 12:34:44
|
|
|
|
`IRF5305S
|
2024 JSMSEMI
|
360
|
4,09
|
10.07.2026 12:34:44
|
|
|
