|
IRF5305 TO-220AB
|
2024
|
50
|
3,52
|
11.05.2026 11:04:26
|
|
|
|
IRF5305PBF TO-220AB
|
Infineon
|
40
|
4,93
|
11.05.2026 11:04:26
|
|
|
|
IRF5305S TO-263-3
|
IR
|
2
|
7,04
|
11.05.2026 11:04:26
|
|
|
|
IRF5305S
|
08 ИМПОРТ - ПОЛУПРОВОДНИКИ Имп - Транзисторы Имп
|
2
|
7,24
|
04.05.2026 12:44:22
|
|
|
|
Транзистор КП745А IRF530
|
International Rectifier
|
100
|
5,27
|
29.04.2026 14:07:34
|
|
|
|
Транзистор КП769Б IRF530
|
International Rectifier
|
100
|
5,27
|
29.04.2026 14:07:34
|
|
|
|
Транзистор IRF530
|
International Rectifier
|
100
|
5,27
|
29.04.2026 14:07:34
|
|
|
|
Транзистор IRF5305
|
International Rectifier
|
10
|
9,87
|
29.04.2026 14:07:34
|
|
|
|
IRF530
|
транзистор (STM- N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR, TO-220AB)
|
7
|
6,04
|
29.04.2026 13:59:53
|
|
|
|
IRF530 (98г.)
|
транзистор (MSC- N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR, TO-220AB)
|
3
|
5,29
|
29.04.2026 13:59:53
|
|
|
|
IRF5305P (2023г.)
|
транзистор (IR - HEXFET® Power MOSFET, P, -55V, -31A, TO-220AB)
|
30
|
9,82
|
29.04.2026 13:59:53
|
|
|
|
IRF530N (2008г.)
|
транзистор (IR - Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A,TO-220AB)
|
21
|
6,04
|
29.04.2026 13:59:53
|
|
|
|
IRF530
|
VISH/IR TO-220AB
|
|
11,66
|
28.04.2026 12:23:49
|
|
|
|
IRF5305
|
IR TO220AB
|
|
11,16
|
28.04.2026 12:23:49
|
|
|
|
IRF530N
|
IR TO220
|
|
6,23
|
28.04.2026 12:23:49
|
|
|
|
IRF530N MOSFET N-Ch 100V 17A
|
05 IR TO-220 линейка 50
|
3103
|
3,02
|
28.04.2026 9:49:19
|
|
|
|
IRF530N MOSFET N-Ch 100V 17A
|
б/г ST ТО-220 лин.50
|
71
|
2,82
|
28.04.2026 9:49:19
|
|
|
|
IRF530NPBF MOSFET N-Ch 100V 17A
|
07 IR лин.50
|
50
|
3,02
|
28.04.2026 9:49:19
|
|
|
|
`IRF5305
|
2024 JSMSEMI 50
|
200
|
3,24
|
28.04.2026 9:49:19
|
|
|
|
`IRF5305
|
2024 JSMSEMI 25
|
50
|
3,24
|
28.04.2026 9:49:19
|
|
|
