|
IRF5210
|
(IR - Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) TO-220AB)
|
50
|
6,60
|
13.07.2026 10:58:09
|
|
|
|
`IRF5210
|
2025 JSMSEMI
|
600
|
5,79
|
10.07.2026 12:34:44
|
|
|
|
`IRF5210PBF
|
2025 Infineon Technologies
|
3000
|
7,96
|
10.07.2026 12:34:44
|
|
|
|
`IRF5210PBF
|
2024 Infineon Technologies
|
1480
|
7,96
|
10.07.2026 12:34:44
|
|
|
|
`IRF5210STRLPBF
|
2022 Infineon Technologies
|
1695
|
7,44
|
10.07.2026 12:34:44
|
|
|
|
IRF5210S MOSFET P-Ch 100V 38A
|
4 IR ТО-263
|
101
|
4,27
|
10.07.2026 12:32:33
|
|
|
|
IRF5210 TO220
|
IR
|
|
12,80
|
09.07.2026 12:38:13
|
|
|
|
IRF5210
|
TO220 IR
|
30
|
30,47
|
09.07.2026 11:22:01
|
|
|
|
IRF5210S TRL PBF
|
D2PAK / TO263 IR
|
93
|
14,22
|
09.07.2026 11:22:01
|
|
|
|
irf5210spbf
|
Infineon Technologies
|
40
|
35,55
|
07.07.2026 9:05:01
|
|
|
|
irf5210spbf
|
Infineon Technologies
|
24
|
35,55
|
07.07.2026 9:05:01
|
|
|
|
IRF5210 транзисторы IR TO220
|
|
|
|
14.04.2026 16:28:46
|
|
|
|
IRF5210S транзисторы IR D2PAK (TO263)
|
|
|
|
14.04.2026 16:28:46
|
|
|
|
IRF5210
|
|
21
|
23,59
|
02.04.2026 13:34:31
|
|
|
|
IRF5210S
|
|
10
|
18,50
|
02.04.2026 13:34:31
|
|
|
|
IRF5210
|
Транзисторы полевые
|
560
|
5,88
|
16.01.2026 14:26:41
|
|
|
|
IRF5210PBF
|
Транзисторы полевые
|
4480
|
8,09
|
16.01.2026 14:26:41
|
|
|
|
IRF5210STRLPBF
|
Транзисторы полевые
|
1645
|
7,56
|
16.01.2026 14:26:41
|
|
|
|
Транзистор IRF5210S TO-263
|
Разное Мексика
|
7
|
|
16.01.2026 13:44:37
|
|
|
|
IRF5210 TO-220AB
|
92
|
121
|
|
30.10.2025 11:12:40
|
|
|
