|
IRF640 TO-220
|
Infineon
|
63
|
5,08
|
02.11.2026 15:56:10
|
|
|
|
IRF9640 TO-220AB
|
Vishay
|
21
|
4,06
|
02.11.2026 15:56:10
|
|
|
|
IRF9640PBF
|
|
1
|
91,41
|
02.11.2026 15:52:41
|
|
|
|
IRF640N (2001г.)
|
транзистор (IR - Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A), TO220AB)
|
1237
|
4,88
|
28.10.2026 12:25:44
|
|
|
|
IRF640N (2008г.)
|
транзистор (IR - Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A), TO220AB)
|
372
|
5,59
|
28.10.2026 12:25:44
|
|
|
|
IRF640NS (2005г.)
|
транзистор (IR - Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A), D2Pak)
|
599
|
3,05
|
28.10.2026 12:25:44
|
|
|
|
IRF9640
|
транзистор (Siliconix - 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs, TO-220)
|
2
|
4,06
|
28.10.2026 12:25:44
|
|
|
|
IRF9640SPBF (2017г.)
|
транзистор (IR - 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs, D2PAK)
|
226
|
5,59
|
28.10.2026 12:25:44
|
|
|
|
IRF9640STRPBF (2017г.)
|
транзистор (IR - 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs, D2PAK)
|
262
|
5,59
|
28.10.2026 12:25:44
|
|
|
|
Транзистор КП767В IRF640N
|
|
100
|
6,44
|
28.10.2026 11:30:04
|
|
|
|
Транзистор IRF640 КП750А
|
|
10
|
16,73
|
28.10.2026 11:30:04
|
|
|
|
Транзистор IRF640N
|
|
100
|
6,44
|
28.10.2026 11:30:04
|
|
|
|
Транзистор IRF640S КП750А1
|
|
10
|
15,18
|
28.10.2026 11:30:04
|
|
|
|
IRF640NS (F640NS)
|
1 IR D2PAK 50
|
7761
|
2,54
|
28.10.2026 11:24:15
|
|
|
|
IRF640A
|
IR TO-220
|
28
|
2,03
|
28.10.2026 11:24:15
|
|
|
|
IRF640NPBF MOSFET N-Ch 200V 18A
|
9 IR TO-220
|
184
|
2,03
|
28.10.2026 11:24:15
|
|
|
|
IRF640NPBF MOSFET N-Ch 200V 18A
|
IR TO-220AB
|
5266
|
2,03
|
28.10.2026 11:24:15
|
|
|
|
IRF640S
|
Vishay D2PAK
|
5
|
4,57
|
28.10.2026 11:24:15
|
|
|
|
IRF640S
|
IR D2PAK
|
127
|
4,57
|
28.10.2026 11:24:15
|
|
|
|
IRF9640STRLPBF
|
18 Vishay D-PAK 800
|
39
|
0,00
|
28.10.2026 11:24:15
|
|
|
