|
Транзистор IRF640 КП750А
|
2001,Интеграл менее 10
|
|
20,19
|
11.08.2026 16:40:54
|
|
|
|
Транзистор IRF640N
|
International Rectifier более 100
|
|
7,78
|
11.08.2026 16:40:54
|
|
|
|
Транзистор IRF640S КП750А1
|
2002,Интеграл более 10
|
|
18,32
|
11.08.2026 16:40:54
|
|
|
|
Транзистор КП767В IRF640N
|
International Rectifier более 100
|
|
7,78
|
11.08.2026 16:40:54
|
|
|
|
Транзистор IRF640NPBF
|
Infineon
|
1778
|
2,16
|
20.07.2026 14:18:28
|
|
|
|
IRF9640PBF
|
|
1
|
91,41
|
13.07.2026 13:24:10
|
|
|
|
IRF640N (КП 750 А)
|
24 РФ
|
13
|
5,08
|
13.07.2026 13:14:54
|
|
|
|
IRF640N (2001г.)
|
(IR - Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A), TO220AB)
|
1237
|
4,88
|
13.07.2026 10:58:09
|
|
|
|
IRF640N (2008г.)
|
(IR - Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A), TO220AB)
|
372
|
5,59
|
13.07.2026 10:58:09
|
|
|
|
IRF640NS (2005г.)
|
(IR - Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A), D2Pak)
|
599
|
3,05
|
13.07.2026 10:58:09
|
|
|
|
IRF9640
|
(Siliconix - 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs, TO-220)
|
2
|
4,06
|
13.07.2026 10:58:09
|
|
|
|
Транзистор КП767В IRF640N
|
|
100
|
6,44
|
13.07.2026 10:55:11
|
|
|
|
Транзистор IRF640 КП750А
|
|
10
|
16,73
|
13.07.2026 10:55:11
|
|
|
|
Транзистор IRF640N
|
|
100
|
6,44
|
13.07.2026 10:55:11
|
|
|
|
Транзистор IRF640S КП750А1
|
|
10
|
15,18
|
13.07.2026 10:55:11
|
|
|
|
`IRF640N (JSMSEMI)
|
2024 JSMSEMI
|
39
|
2,58
|
10.07.2026 12:34:44
|
|
|
|
`IRF640N (JSMSEMI)
|
2025 JSMSEMI
|
1260
|
2,58
|
10.07.2026 12:34:44
|
|
|
|
`IRF640N (JSMSEMI)
|
2024 JSMSEMI
|
38
|
2,58
|
10.07.2026 12:34:44
|
|
|
|
`IRF640N (JSMSEMI)
|
2024 JSMSEMI
|
28
|
2,58
|
10.07.2026 12:34:44
|
|
|
|
`IRF640NSTRLPBF
|
2022 Infineon Technologies
|
1163
|
3,85
|
10.07.2026 12:34:44
|
|
|
