|
IRF540 TO-220
|
IR
|
64
|
4,06
|
02.11.2026 15:56:10
|
|
|
|
IRF540N TO-220
|
Infineon
|
49
|
2,54
|
02.11.2026 15:56:10
|
|
|
|
IRF9540N TO-220AB
|
Infineon
|
21
|
4,06
|
02.11.2026 15:56:10
|
|
|
|
IRF540N (2005г.)
|
транзистор (IR - HEXFET®PowerMOSFET, Vdss=100V, Rds(on)=0.077Ohm, Id=28A,TO220AB)
|
820
|
4,37
|
28.10.2026 12:25:44
|
|
|
|
IRF540N (2007г.)
|
транзистор (IR - HEXFET®PowerMOSFET, Vdss=100V, Rds(on)=0.077Ohm, Id=28A,TO220AB)
|
11
|
4,57
|
28.10.2026 12:25:44
|
|
|
|
IRFR540ZPBF (2014г.)
|
транзистор (IR - HEXFET®Power MOSFET Vdss=100V, Rds(on)=28.5mOhm, Id=35A, D-Pak)
|
44
|
4,06
|
28.10.2026 12:25:44
|
|
|
|
IRF9540N (2007г.)
|
транзистор (IR- Power MOSFET(Vdss=100V, Rds(on)=0.117ohm, Id=23A), TO-220AB)
|
2
|
4,06
|
28.10.2026 12:25:44
|
|
|
|
Транзистор КП746А IRF540N
|
|
500
|
7,81
|
28.10.2026 11:30:04
|
|
|
|
Транзистор КП769В IRF540N
|
|
500
|
7,81
|
28.10.2026 11:30:04
|
|
|
|
Транзистор IRF540N
|
|
500
|
7,81
|
28.10.2026 11:30:04
|
|
|
|
Транзистор IRF9540N
|
|
500
|
8,12
|
28.10.2026 11:30:04
|
|
|
|
IRF540
|
5 IR TO-220
|
750
|
2,03
|
28.10.2026 11:24:15
|
|
|
|
IRF540 PBF
|
8 IR TO-220
|
242
|
2,03
|
28.10.2026 11:24:15
|
|
|
|
IRF540 PBF
|
17 IR (Infineon) TO-220
|
1469
|
2,03
|
28.10.2026 11:24:15
|
|
|
|
IRF540N PBF
|
11 IR TO-220
|
88
|
2,03
|
28.10.2026 11:24:15
|
|
|
|
IRF540N PBF
|
7 IR TO-220
|
200
|
2,03
|
28.10.2026 11:24:15
|
|
|
|
IRF540N PBF
|
17 IR (Infineon) TO-220
|
342
|
2,03
|
28.10.2026 11:24:15
|
|
|
|
IRF540NS
|
14 IR P2PAK
|
7
|
2,54
|
28.10.2026 11:24:15
|
|
|
|
IRF540NSPBF
|
1 IR TO-263
|
819
|
3,56
|
28.10.2026 11:24:15
|
|
|
|
IRFH5406TR2PBF
|
Infineon
|
98
|
0,00
|
28.10.2026 11:24:15
|
|
|
