Микросхема MX25L25635EMI-12G
|
(MXIC-256MBit [x1/x 2/x 4] CMOS MXSMIO® Flash Memory, SO-16)
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176
|
43,44
|
27.03.2024 14:27:48
|
|
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транзистор SEMiX302GB12E4s
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(SEMIKRON - Semix®2s Trench IGBT Modules, Ic=463A, Vces=1200V)
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12
|
530,88
|
27.03.2024 14:27:48
|
|
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MGF4319G-01 SUPER-LOW-NOISE INGAAS HEMT TRANSISTOR 12GHZ 12DB 4V 60MA 50MW
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б/г Mitsubishi в пленке
|
14
|
17,60
|
12.01.2024 12:12:29
|
|
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CN2-GC 133 ~220B 50гЦ 125A 75kW ~500B Telemecanigue
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бг б/пасп.б/упак. Н.уп.:
|
1
|
588,19
|
22.11.2023 10:08:48
|
|
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BG06-31/P05LA32-G/EMV-SP 0.18квт 3200об/м, 17,1Н*м
|
|
1
|
3519,09
|
03.10.2023 14:05:30
|
|
|
25L3206EM2I-12G
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MXIC SOP8
|
|
9,15
|
13.09.2023 15:25:19
|
|
|
MX25L1606EM2I-12G
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MXIC SOP8
|
|
5,53
|
13.09.2023 15:25:19
|
|
|
MX25L6406EMI-12G
|
Macronix SOP-16
|
|
11,76
|
13.09.2023 15:25:19
|
|
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MX25L1606EM2I-12G SO8-208 MX
|
|
17
|
15,08
|
12.09.2023 10:13:33
|
|
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MX25L3206EM2I-12G SO8-208 Macronix
|
|
11
|
17,49
|
12.09.2023 10:13:33
|
|
|
MX25L3208EM2I-12G SO8-208 Macronix
|
|
14
|
9,45
|
12.09.2023 10:13:33
|
|
|
MX25L6406EM2I-12G SO8-208 MX
|
|
10
|
15,08
|
12.09.2023 10:13:33
|
|
|
MX25L8006EM2I-12G SO8-208 Macronix
|
|
8
|
9,45
|
12.09.2023 10:13:33
|
|
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NJW0302G TO3P ONSemiconductor
|
|
23
|
37,70
|
12.09.2023 10:13:33
|
|
|
MP1472GJ SOT23-8 Monolithic Power Systems код *ACW*
|
|
70
|
14,38
|
12.09.2023 10:13:33
|
|
|
MP2122GJ TSOT23-8 Monolithic Power Systems код AED*
|
|
188
|
10,56
|
12.09.2023 10:13:33
|
|
|
NCP1207ADR2G SO8 ON Semiconductor код 1207A
|
|
60
|
11,36
|
12.09.2023 10:13:33
|
|
|
NCP1612ADR2G SO10 ON Semiconductor
|
|
|
|
12.09.2023 10:13:33
|
|
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NCP1653ADR2G SO8 ON Semiconductor
|
|
25
|
16,99
|
12.09.2023 10:13:33
|
|
|
4,7mF x 250V 105 10x12 Gembird
|
|
212
|
1,01
|
12.09.2023 10:13:33
|
|
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