|
LM833DR2G ONSemiconductor
|
|
19
|
3,27
|
27.09.2024 9:45:49
|
|
|
|
MC33077DR2G ONSemiconductor
|
|
3
|
13,07
|
27.09.2024 9:45:49
|
|
|
|
CN2-GC 133 ~220B 50гЦ 125A 75kW ~500B Telemecanigue
|
бг б/пасп.б/упак. Н.уп.:
|
1
|
588,19
|
26.09.2024 15:46:13
|
|
|
|
BG06-31/P05LA32-G/EMV-SP 0.18квт 3200об/м, 17,1Н*м
|
|
1
|
3519,09
|
26.09.2024 15:37:42
|
|
|
|
SEMiX302GB12E4s
|
транзистор (SEMIKRON - Semix®2s Trench IGBT Modules, Ic=463A, Vces=1200V)
|
12
|
530,88
|
26.09.2024 15:22:21
|
|
|
|
MX25L25635EMI-12G
|
Микросхема (MXIC-256MBit [x1/x 2/x 4] CMOS MXSMIO® Flash Memory, SO-16)
|
176
|
43,44
|
26.09.2024 15:22:21
|
|
|
|
KF2002-GF45B (EM48N-7059 Ver A)
|
19 SHEC з/уп, 40
|
1960
|
0,00
|
26.09.2024 15:21:21
|
|
|
|
MGF4319G-01 super-low-noise InGaAs HEMT transistor 12GHz 12dB 4V 60mA 50mW
|
б/г Mitsubishi в пленке
|
14
|
15,08
|
26.09.2024 15:21:21
|
|
|
|
KF2002-GF45B (EM48N-7059 Ver A) термоголовка
|
19 SHEC з/уп, 40
|
|
50,27
|
26.09.2024 15:21:21
|
|
|
|
MGF4319G-01 super-low-noise InGaAs HEMT transistor 12GHz 12dB 4V 60mA 50mW
|
б/г Mitsubishi в пленке
|
|
15,08
|
26.09.2024 15:21:21
|
|
|
|
25L3206EM2I-12G
|
MXIC SOP-8
|
|
9,15
|
26.09.2024 15:10:06
|
|
|
|
MX25L1606EM2I-12G
|
MXIC SOP8
|
|
5,53
|
26.09.2024 15:10:06
|
|
|
|
MX25L6406EMI-12G
|
Macronix SOP-16
|
|
11,76
|
26.09.2024 15:10:06
|
|
|
|
MX25L1606EM2I-12G SO8-208 MX
|
|
13
|
15,08
|
26.09.2024 15:05:14
|
|
|
|
MX25L3206EM2I-12G SO8-208 Macronix
|
|
49
|
13,57
|
26.09.2024 15:05:14
|
|
|
|
MX25L3208EM2I-12G SO8-208 Macronix
|
|
14
|
9,45
|
26.09.2024 15:05:14
|
|
|
|
MX25L6406EM2I-12G SO8-208 MX
|
|
47
|
13,57
|
26.09.2024 15:05:14
|
|
|
|
MX25L8006EM2I-12G SO8-208 Macronix
|
|
50
|
8,35
|
26.09.2024 15:05:14
|
|
|
|
NCP1207ADR2G SO8 ON Semiconductor код 1207A
|
|
47
|
11,36
|
26.09.2024 15:05:14
|
|
|
|
MP1472GJ SOT23-8 Monolithic Power Systems код *ACW*
|
|
70
|
14,38
|
26.09.2024 15:05:14
|
|
|
