|
CN2-GC 133 ~220B 50гЦ 125A 75kW ~500B Telemecanigue
|
б/пасп.б/упак. Н.уп.:
|
1
|
588,19
|
12.06.2026 10:44:13
|
|
|
|
BG06-31/P05LA32-G/EMV-SP 0.18квт 3200об/м, 17,1Н*м
|
|
1
|
3519,09
|
04.05.2026 10:54:38
|
|
|
|
MX25L1606EM2I-12G (2018г.)
|
Микросхема (MXIC-16M-BIT [x 1 / x 2] CMOS SERIAL FLASH, SOP-8)
|
92
|
5,29
|
29.04.2026 13:59:53
|
|
|
|
MX25L1606EM2I-12G (2019г.)
|
Микросхема (MXIC-16M-BIT [x 1 / x 2] CMOS SERIAL FLASH, SOP-8)
|
184
|
5,29
|
29.04.2026 13:59:53
|
|
|
|
MX25L1606EM2I-12G(TR) (2017г.)
|
Микросхема (MXIC-16M-BIT [x 1 / x 2] CMOS SERIAL FLASH, SOP-8)
|
80
|
5,29
|
29.04.2026 13:59:53
|
|
|
|
MX25L25635EMI-12G
|
Микросхема (MXIC-256MBit [x1/x 2/x 4] CMOS MXSMIO® Flash Memory, SO-16)
|
176
|
74,00
|
29.04.2026 13:59:53
|
|
|
|
SEMiX252GB176HDs
|
транзистор (SEMIKRON - Semix®2s Trench IGBT Modules, Ic=246A, Vces=1700V)
|
150
|
830,67
|
29.04.2026 13:59:53
|
|
|
|
SEMiX302GB12E4s
|
транзистор (SEMIKRON - Semix®2s Trench IGBT Modules, Ic=463A, Vces=1200V)
|
6
|
830,67
|
29.04.2026 13:59:53
|
|
|
|
SEMiX402GAR066HDs
|
транзистор (SEMIKRON - Semix®2s Trench IGBT Modules, Ic=502A, Vces=600V)
|
76
|
1057,21
|
29.04.2026 13:59:53
|
|
|
|
MX25L1606EM2I-12G
|
MXIC SOP8
|
|
5,83
|
28.04.2026 12:23:49
|
|
|
|
MX25L6406EMI-12G
|
Macronix SOP-16
|
|
12,37
|
28.04.2026 12:23:49
|
|
|
|
KF2002-GF45B (EM48N-7059 Ver A) термоголовка
|
19 SHEC з/уп, 40
|
1960
|
50,27
|
28.04.2026 9:49:19
|
|
|
|
MGF4319G-01 super-low-noise InGaAs HEMT transistor 12GHz 12dB 4V 60mA 50mW
|
б/г Mitsubishi в пленке
|
12
|
15,08
|
28.04.2026 9:49:19
|
|
|
|
MX25L1606EM2I-12G
|
|
11
|
16,09
|
27.04.2026 10:34:53
|
|
|
|
MX25L3206EM2I-12G
|
|
38
|
14,08
|
27.04.2026 10:34:53
|
|
|
|
MX25L3208EM2I-12G
|
|
14
|
10,05
|
27.04.2026 10:34:53
|
|
|
|
MX25L6406EM2I-12G
|
|
43
|
14,08
|
27.04.2026 10:34:53
|
|
|
|
MX25L8006EM2I-12G
|
|
30
|
9,05
|
27.04.2026 10:34:53
|
|
|
|
микросхема MC33077DR2G ONSemiconductor
|
|
3
|
19,77
|
17.04.2026 8:48:08
|
|
|
|
MX 25L1606E M2I-12G микросхемы MXIC SO8
|
|
|
|
14.04.2026 16:28:46
|
|
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