|
TZB4Z030BA10 1.4/3пФ 100В
|
|
500
|
4,05
|
19.01.2026 14:23:05
|
|
|
|
0805 10пф NP0 50в 5% CL21C100JBANNNC
|
Samsung
|
1746
|
0,04
|
16.01.2026 14:34:15
|
|
|
|
BAS316 SOD-323 250mA 100V
|
|
229
|
0,14
|
16.01.2026 14:34:15
|
|
|
|
0805 100пф NP0 50в 5% CL21C101JBANNNC
|
Samsung
|
1754
|
0,04
|
16.01.2026 14:34:15
|
|
|
|
0805 1000пф X7R 50в 10% CL21B102KBANNNC
|
Samsung
|
119
|
0,05
|
16.01.2026 14:34:15
|
|
|
|
BAV100PHILIPS
|
30.12.1899 20:39:00
|
2130
|
12,07
|
16.01.2026 14:32:35
|
|
|
|
MG100N2YS1 (TOSHIBA)
|
|
2
|
955,18
|
16.01.2026 14:32:35
|
|
|
|
BA159 1А/1000В
|
30.12.1899 2:25:00
|
145
|
14,08
|
16.01.2026 14:32:35
|
|
|
|
MBA10-06
|
Кабельные вводы
|
294
|
16,91
|
16.01.2026 14:26:41
|
|
|
|
09300100301 Han 10 B-AGG-QB
|
(HARTING - Han B Base Panel 2 Levers) Разъём
|
33
|
110,60
|
16.01.2026 14:19:17
|
|
|
|
DGS-712 1000BASE-T Copper SFP Transceiver
|
(RJ-45, до 100м, 1 порт) Блоки
|
7
|
100,55
|
16.01.2026 14:19:17
|
|
|
|
ECAP 100/350V 2230 85°C 20% (ELP101M2VBA)
|
15 HITANO
50
|
70
|
0,00
|
16.01.2026 14:15:59
|
|
|
|
ECAP 1000/250V 3550 105°C 20% (EHL102M2EBA)
|
HITANO
50
|
68
|
45,25
|
16.01.2026 14:15:59
|
|
|
|
0805 NP0 25V (50V) 100 пФ 5% (CL21C101JBANNNC)
|
Samsung
|
4000
|
0,00
|
16.01.2026 14:15:59
|
|
|
|
TPV8100B Au
|
2 Motorola
|
1
|
0,00
|
16.01.2026 14:15:59
|
|
|
|
TPV8100B Au
|
5 ASI
|
1
|
0,00
|
16.01.2026 14:15:59
|
|
|
|
1206 NPO 100V 4700 пФ 5% (VJ1206A472JXBATOO)
|
Vishay
3000
|
2045
|
0,00
|
16.01.2026 14:15:59
|
|
|
|
1812 NPO 100V 4700 pF 10% (VJ1812A472KXBAT4X)
|
17 Vishay
|
2000
|
1,61
|
16.01.2026 14:15:59
|
|
|
|
1812 NPO 100V 4700 pF 10% (VJ1812A472KXBAT4X)
|
20 Vishay
1000
|
1000
|
1,61
|
16.01.2026 14:15:59
|
|
|
|
ECAP 10000/16V 2230 105* (EHP103M16BA)
|
HITANO
|
4
|
3,02
|
16.01.2026 14:15:59
|
|
|
