|
гк 18000 \VCXO\ТО-1(4)\SIN\6,3В\ГК23-УН\
|
40/-40~70C Vc:3,5+/-3,5В ПЧ:100p
|
2
|
52,86
|
02.04.2026 14:25:50
|
|
|
|
гк 18000 \\FULL\ \\\CTS бу
|
(CTS SINGAPORE 18.0MHZ)
|
1
|
32,02
|
02.04.2026 14:25:50
|
|
|
|
гк 18000 \\FULL\CM\5В\CXO\QUARTZ-1
|
100/0~70C 40/60%
|
57
|
41,53
|
02.04.2026 14:25:50
|
|
|
|
гк 18000 \\FULL\CM\5В\CXO\QUARTZ-1
|
100/0~70C 40/60%
|
4
|
41,53
|
02.04.2026 14:25:50
|
|
|
|
гк 18000 \\FULL\CM\5В\P1100-HC\бм
|
PLETRONICS 100/0~70C 40/60%
|
1
|
23,41
|
02.04.2026 14:25:50
|
|
|
|
гк 18000 \\FULL\T/CM\5В\MO-12B\MEC
|
50/0~70C 1~10T/HC15pF 40/60%
|
522
|
37,76
|
02.04.2026 14:25:50
|
|
|
|
гк 18000 \\HALF\CM\5В\SQ2200\PLE
|
PLETRONICS 100/0~70C 40/60%
|
30
|
40,78
|
02.04.2026 14:25:50
|
|
|
|
гк 18000 \\HALF\T/CM\3,3В\MO-26B-S\MEC
|
50/-40~85C 40/60% TRI
|
75
|
33,98
|
02.04.2026 14:25:50
|
|
|
|
гк 18000 \\SMD05032C4\T/CM\3,3В\MSO5032L\MEC
|
50/-40~85C 40/60% T/R TRI
|
58
|
29,45
|
02.04.2026 14:25:50
|
|
|
|
гк 18000 \\SMD07050C4\CM\3,3В\VX7\JAUCH
|
50/-40~85C (J 7M) VX7-B-3,3-1-T1 TRI
|
4
|
72,04
|
02.04.2026 14:25:50
|
|
|
|
18000 \ МВ\\\\РГ05МВ\1Г
|
83~89г. выбита
|
202
|
3,78
|
02.04.2026 14:25:50
|
|
|
|
18000 \ МВ\\\\РК353МВ\1Г
|
92г
|
741
|
3,02
|
02.04.2026 14:25:50
|
|
|
|
18000 \ ТО96\\\\\1Г (18М)
|
транзисторный корпус
|
25
|
3,17
|
02.04.2026 14:25:50
|
|
|
|
18000 \ ЭБ\S\\\КР14\1Г 10x27
|
91г. показ прибор[54059~54061]3Г
|
1715
|
15,86
|
02.04.2026 14:25:50
|
|
|
|
18000 \C03731C3\\4000\\ZTTCV18,0MX\
|
пкер
|
843
|
2,11
|
02.04.2026 14:25:50
|
|
|
|
18000 \C04741C3\\4000\\ZTTCS18,0MX\
|
пкер
|
947
|
2,11
|
02.04.2026 14:25:50
|
|
|
|
18000 \C07x5x08P2\\\\ZTA18,0MX\2P
|
2-x выводной пкер
|
857
|
1,51
|
02.04.2026 14:25:50
|
|
|
|
18000 \HC25U\S\ 15\ 20/-10~60C\РК353МА-6АП\1Г
|
|
258
|
3,78
|
02.04.2026 14:25:50
|
|
|
|
18000 \HC25U\S\ 30\ 40/-10~60C\РГ05МА-8АТ\1Г
|
|
42
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
18000 \HC25U\S\ 50\100/-30~60C\РК353МА-9БХ\1Г
|
596шт
|
55
|
3,78
|
02.04.2026 14:25:50
|
|
|
