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КМД-09530У3 ~380В
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ОТК 2008 У3 трещины на корпусе б/пасп.б/упак. Н.уп.:
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1
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754,09
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26.09.2024 15:46:13
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|
|
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АВ0095 300х125х46
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2
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184,12
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26.09.2024 15:40:20
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|
|
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С2-29В-0.062-95.3-0,5%-1,0-А
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2006 5,упак.
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34
|
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26.09.2024 15:23:39
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|
|
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С2-29В-0.062-95.3-0.5% 1-Б
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2012 5,упак.
|
25
|
|
26.09.2024 15:23:39
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|
|
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С2-29в-0.125-9.53-0.5%-1.0-Б
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87 5,без упак. на палетах
|
53
|
|
26.09.2024 15:23:39
|
|
|
|
С2-29в-0.125-9.53-0.5%-1.0-Б
|
88 5,упак.
|
50
|
|
26.09.2024 15:23:39
|
|
|
|
С2-29в-0.125-95.3-0.25%-1.0-А
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86 5,упак.
|
24
|
|
26.09.2024 15:23:39
|
|
|
|
С2-29В-0.125-95.3-0.5% 1-А
|
2006 5, упак.
|
75
|
|
26.09.2024 15:23:39
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|
|
|
С2-29В-0.125-95.3-0.5% 1-А
|
2007 5, упак.
|
40
|
|
26.09.2024 15:23:39
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|
|
|
С2-29в-0.125-953-0.5%-1.0-А
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94 ОС,упак.
|
75
|
|
26.09.2024 15:23:39
|
|
|
|
С2-29в-0.125-953-0.5%-1.0-А
|
2010 ОС,упак.
|
16
|
|
26.09.2024 15:23:39
|
|
|
|
С2-29в-0.125-953-0.5%-1.0-А
|
2012 ОС,упак.
|
46
|
|
26.09.2024 15:23:39
|
|
|
|
С2-29в-0.125-953-0.5%-1.0-А
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2013 ОС,упак.
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125
|
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26.09.2024 15:23:39
|
|
|
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С2-29в-0.25-9.53-0,5%-1.0-Б
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83 5,упак.
|
3
|
|
26.09.2024 15:23:39
|
|
|
|
С2-29в-0.25-9.53-0,5%-1.0-Б
|
87 5,упак.
|
60
|
|
26.09.2024 15:23:39
|
|
|
|
С2-29в-0.5-9.53-0.5%-1.0-Б
|
84 5,упак.
|
26
|
|
26.09.2024 15:23:39
|
|
|
|
С2-29Вв-0.125-953-0.25%-1.0-А
|
90 5,упак.
|
50
|
|
26.09.2024 15:23:39
|
|
|
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С2-36-0.125-953-0.5%
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90 5,А-Н-В
|
164
|
|
26.09.2024 15:23:39
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|
|
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4.895.308-1Сп (кабель)
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5,без упак. в пленке,ярлык
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1
|
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26.09.2024 15:23:19
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IRFI9530N
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транзистор (IR - Pwr MOSFET(Vdss=-100V, Rds(on)=0.3Ohm, Id=-7.7A), TO220 FULLPAK)
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10
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5,53
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26.09.2024 15:22:21
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