|
12858,3 \HC50U\\\\РК169МА\1Г
|
|
83
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
12858,3 \КА\\5\ 10/-10~60C\К1-4АМ\1Г
|
|
474
|
18,88
|
02.04.2026 14:25:50
|
|
|
|
15858,3 \HC25U\\\\РГ05МА\1Г
|
97г.
|
75
|
18,88
|
02.04.2026 14:25:50
|
|
|
|
15858,3 \HC49U\S\ 15\ 30/-40~70C\РПК01МД-6ВС\1Г
|
VNIISIMS
|
100
|
11,33
|
02.04.2026 14:25:50
|
|
|
|
18583 \КА\\\\\1Г
|
97г.(18583 К)
|
3
|
32,47
|
02.04.2026 14:25:50
|
|
|
|
4385,837 \HC49U\16,5\ 20\ 20/-20~70C\XUA\1Г CREC
|
(4.3858375 EDC)
|
962
|
1,51
|
02.04.2026 14:25:50
|
|
|
|
45858,33 \UM1\S\\\\3Г бм
|
|
8
|
33,98
|
02.04.2026 14:25:50
|
|
|
|
48583 \КА\\\\\3Г
|
|
3
|
33,98
|
02.04.2026 14:25:50
|
|
|
|
48858,3 \HC49U\32\\\\3Г 5мм
|
|
35
|
18,88
|
02.04.2026 14:25:50
|
|
|
|
51858,3 \HC25U\\\\МА\3Г
|
(краска)[17264~17268кГц]1Г
|
2
|
27,94
|
02.04.2026 14:25:50
|
|
|
|
53858,3 \HC43U\32\\\\3Г
|
|
34
|
18,88
|
02.04.2026 14:25:50
|
|
|
|
8583,333 \СР\\\\РК207\1Г 19x41
|
|
5
|
38,51
|
02.04.2026 14:25:50
|
|
|
|
85833 \HC49U\\\\МД\5Г
|
(85,833М-В)
|
31
|
23,41
|
02.04.2026 14:25:50
|
|
|
|
85833 \HC49U\\\\МД\5Г
|
99г.(85.833М-В)
|
7
|
23,41
|
02.04.2026 14:25:50
|
|
|
|
85833 \КА\\\\\5Г
|
|
136
|
18,88
|
02.04.2026 14:25:50
|
|
|
|
85833 \КА\\\\\5Г
|
99,2000г [17160~17179кГц]1Г
|
7
|
18,88
|
02.04.2026 14:25:50
|
|
|
|
85833,3 \HC25U\\\\РГ05МА\5Г
|
|
30
|
33,98
|
02.04.2026 14:25:50
|
|
|
|
85833,3 \МВ\\\\РГ05\5Г
|
|
1
|
33,98
|
02.04.2026 14:25:50
|
|
|
|
85833,3 \ЭБ\\\\РК203ЭБ\5Г 10x27
|
|
43
|
27,94
|
02.04.2026 14:25:50
|
|
|
|
пп PCF8583P/F5.112\DIP-8-300 \спец\PH
|
Полупроводники
|
7
|
49,54
|
02.04.2026 14:25:21
|
|
|
