|
SSH6N80 (2006г.)
|
транзистор (SEC, IGBT-мощный, 12а, 800в, TO-3P)
|
1
|
11,83
|
02.10.2025 12:49:31
|
|
|
|
TT56N800KOF
|
AEG
|
6
|
251,36
|
02.10.2025 12:48:06
|
|
|
|
FQB6N80TM MOSFET N-Ch 800V 5.8A
|
Fairchild D2PAK
|
202
|
6,54
|
02.10.2025 12:48:06
|
|
|
|
STF6N80K5 MOSFET N-Ch 800V, 4.5A, 1.6 Om 25W
|
ST TO-220FP
|
99
|
7,04
|
02.10.2025 12:48:06
|
|
|
|
SPD06N80C3
|
ST DPAK
|
|
8,65
|
02.10.2025 12:41:39
|
|
|
|
UTC6N80L
|
UTC TO-220
|
|
12,17
|
02.10.2025 12:41:39
|
|
|
|
FQPF6N80C
|
Fairchild TO-220F
|
|
9,45
|
02.10.2025 12:41:39
|
|
|
|
SPD06N80C3
|
DPAK / TO252 Infineon транзистор
|
38
|
13,57
|
02.10.2025 12:37:59
|
|
|
|
FQPF6N80C
|
TO220F Fair транзистор
|
16
|
17,09
|
02.10.2025 12:37:59
|
|
|
|
SSH6N80
|
TO3P SEC транзистор
|
43
|
46,75
|
02.10.2025 12:37:59
|
|
|
|
SPA06N80C3
|
TO220F Infineon транзистор
|
25
|
21,11
|
02.10.2025 12:37:59
|
|
|
|
6N80C (FQPF6N80C)
|
TO-220F N-Channel 800V, 5.5A,Rds(ON)=2.5,Thermal resistance=2.45
|
+
|
7,34
|
01.10.2025 13:46:32
|
|
|
|
6N80C (FQP6N80C)
|
TO-220 N-Channel 800V, 5.5A,Rds(ON)=2.5,Thermal resistance=0.79
|
+
|
6,13
|
01.10.2025 13:46:32
|
|
|
|
Транзистор FQB6N80TM
|
Гонконг
|
800
|
|
01.10.2025 13:36:29
|
|
|
|
SPD06N80C3 транзисторы
|
ST DPAK (TO252)
|
|
|
01.10.2025 13:31:31
|
|
|
|
FQP6N80C (TO220)
|
ON S TO220
|
|
|
01.10.2025 13:31:31
|
|
|
|
FQPF6N80C (TO220F)
|
FAIR TO220F
|
|
|
01.10.2025 13:31:31
|
|
|
|
FQB6N80TM MOSFET N-CH 800V 5,8A
|
|
|
|
01.10.2025 12:56:45
|
|
|
|
FQP6N80C
|
|
|
|
01.10.2025 12:56:45
|
|
|
|
FQPF6N80C
|
|
|
|
01.10.2025 12:56:45
|
|
|
