|
FQPF6N80C
|
Fairchild TO-220F
|
|
9,35
|
21.01.2026 9:16:16
|
|
|
|
SPD06N80C3
|
ST DPAK
|
|
12,67
|
21.01.2026 9:16:16
|
|
|
|
UTC6N80L
|
UTC TO-220
|
|
12,57
|
21.01.2026 9:16:16
|
|
|
|
SSH6N80 (2006г.)
|
(SEC, IGBT-мощный, 12а, 800в, TO-3P) транзистор
|
1
|
13,47
|
16.01.2026 14:19:17
|
|
|
|
FQB6N80TM MOSFET N-Ch 800V 5.8A
|
Fairchild D2PAK
800
|
202
|
6,54
|
16.01.2026 14:15:59
|
|
|
|
STF6N80K5 MOSFET N-Ch 800V, 4.5A, 1.6 Om 25W
|
ST TO-220FP
|
99
|
7,04
|
16.01.2026 14:15:59
|
|
|
|
TT56N800KOF
|
AEG
|
6
|
251,36
|
16.01.2026 14:15:59
|
|
|
|
SPA06N80C3
|
транзистор TO220F Infineon
|
24
|
23,63
|
16.01.2026 14:09:17
|
|
|
|
SPD06N80C3
|
транзистор DPAK / TO252 Infineon
|
32
|
15,08
|
16.01.2026 14:09:17
|
|
|
|
FQPF6N80C
|
транзистор TO220F Fair
|
16
|
18,60
|
16.01.2026 14:09:17
|
|
|
|
SSH6N80
|
транзистор TO3P SEC
|
43
|
52,28
|
16.01.2026 14:09:17
|
|
|
|
6N80C (FQPF6N80C)
|
TO-220F N-Channel 800V, 5.5A,Rds(ON)=2.5,Thermal resistance=2.45
|
+
|
7,64
|
16.01.2026 14:01:09
|
|
|
|
6N80C (FQP6N80C)
|
TO-220 N-Channel 800V, 5.5A,Rds(ON)=2.5,Thermal resistance=0.79
|
+
|
6,44
|
16.01.2026 14:01:09
|
|
|
|
Транзистор FQB6N80TM
|
Разное Гонконг
|
800
|
|
16.01.2026 13:44:37
|
|
|
|
FQP 6N80C (TO220)
|
ON S TO220
|
|
|
16.01.2026 13:35:03
|
|
|
|
FQPF 6N80C (TO220F)
|
FAIR TO220F
|
|
|
16.01.2026 13:35:03
|
|
|
|
STF6N80K5 MOSFET N-CH 800V, 4,5A, 1,6 OM 25W
|
|
74
|
|
16.01.2026 12:28:04
|
|
|
|
TT56N800KOF
|
|
5
|
|
16.01.2026 12:28:04
|
|
|
|
SPD06N80C3
|
|
18
|
|
16.01.2026 12:28:04
|
|
|
|
FQB6N80TM MOSFET N-CH 800V 5,8A
|
|
152
|
|
16.01.2026 12:28:04
|
|
|
