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А682-002-05 шк.1100-1800град.С
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Прибор ОТК 1992 без пасп без упак Н.уп.:
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1
|
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02.11.2026 16:02:41
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|
|
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0402 6800пф X7R 50в 10% CL05B682KB5NNNC
|
Samsung
|
8600
|
0,01
|
02.11.2026 15:56:10
|
|
|
|
0603 6800пф X7R 50в 10% CL10B682KB8NNNC
|
Samsung
|
3349
|
0,02
|
02.11.2026 15:56:10
|
|
|
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0805 6800пф X7R 50в 10% CL21B682KBANNNC
|
Samsung
|
76
|
0,05
|
02.11.2026 15:56:10
|
|
|
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0805 6800пф X7R 50в 10% 0805B682K500NT
|
Fenghua
|
1930
|
0,05
|
02.11.2026 15:56:10
|
|
|
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1206 6800пф NP0 50в 5% CC1206JRNPO9BN682
|
Yageo
|
1990
|
0,61
|
02.11.2026 15:56:10
|
|
|
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1206 6800пф X7R 50в 10% CL31B682KBCNNNC
|
Samsung
|
3490
|
0,18
|
02.11.2026 15:56:10
|
|
|
|
1206 6800пф X7R 100в 10% 1206B682K101PRG
|
PDC
|
3792
|
0,25
|
02.11.2026 15:56:10
|
|
|
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3329H-1-682 6,8 кОм 0,5W 10%
|
Kingtronics
|
116
|
1,63
|
02.11.2026 15:56:10
|
|
|
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3296W-1-682 6,8 кОм 0,5W 10%
|
Runtron
|
78
|
1,22
|
02.11.2026 15:56:10
|
|
|
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09032646821роз. Harting (00г)Au
|
00:34
|
34
|
142,20
|
02.11.2026 15:52:41
|
|
|
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09032646825 HARTING (04г)
|
04:500
|
500
|
144,23
|
02.11.2026 15:52:41
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|
|
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ПСМ18-10/2 20/2 БА4.682.472 кл2
|
88:1
|
1
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1371,21
|
02.11.2026 15:52:41
|
|
|
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ТБ261-160-12-682
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89:2
|
2
|
162,51
|
02.11.2026 15:52:41
|
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2Т6821 ж.
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00:5
|
5
|
8,13
|
02.11.2026 15:52:41
|
|
|
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SPA-1682
|
М
|
1
|
88,27
|
29.10.2026 8:52:22
|
|
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B82494A1682K000-6,8 мкГн-10%
|
дроссель (Epcos - SMT Inductor SIMID 1008-A, 115mA, 45MHz, 1.95 Ohm, Size 2520)
|
117
|
2,23
|
28.10.2026 12:25:44
|
|
|
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LPO4815-682ML-6,8 мкГн-20% SMD
|
дроссель (COILCRAFT - Low Profile Surface Mount Power Inductors, 6.8uH, 0.65A)
|
586
|
14,02
|
28.10.2026 12:25:44
|
|
|
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B37981F1682K054-6800 пФ-10%
|
конденсатор (EPCOS 6.8nF Ceramic Multilayer Capacitor, 100VDC X7R Dielectric ±10%)
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2477
|
0,81
|
28.10.2026 12:25:44
|
|
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C1206-Y5V-50v-6800 пФ-20% (CL31F682MBNC) (2000г.)
|
конденсатор SMD (Samsung)
|
1660
|
|
28.10.2026 12:25:44
|
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