|
SMLVT3V защитный диод 3,3V 600W
|
б/г ST DO-214AA бобина
|
409
|
2,01
|
26.09.2024 15:21:21
|
|
|
|
NAND08GW3B2CN6E Flash memories Parallel 3V/3.3V 8G-bit 1Gx8 25us
|
б/г STM TSO-48 з/уп
|
99
|
95,52
|
26.09.2024 15:21:21
|
|
|
|
SMLVT3V защитный диод 3,3V 600W
|
б/г ST DO-214AA бобина
|
|
2,01
|
26.09.2024 15:21:21
|
|
|
|
NAND08GW3B2CN6E Flash memories Parallel 3V/3.3V 8G-bit 1Gx8 25us
|
б/г STM TSO-48 з/уп
|
|
95,52
|
26.09.2024 15:21:21
|
|
|
|
CERCAP 5.6p/63V DNPO
|
Galanz ***
|
|
1,01
|
26.09.2024 15:10:06
|
|
|
|
CERCAP 7.5p/63V DNPO
|
Galanz ***
|
|
2,92
|
26.09.2024 15:10:06
|
|
|
|
ECAP 1/63V 0511 105C
|
JAM 0511R
|
|
1,01
|
26.09.2024 15:10:06
|
|
|
|
ECAP 1/63V(5x11) 105 градусов
|
Samwha
|
|
1,01
|
26.09.2024 15:10:06
|
|
|
|
ECAP 10/63V 0511 105C
|
JAM
|
|
1,01
|
26.09.2024 15:10:06
|
|
|
|
ECAP 10/63V 0511 105C SH (SH063M0010B2F-0511)
|
YAG
|
|
0,90
|
26.09.2024 15:10:06
|
|
|
|
ECAP 100/63V 0814 105C TK
|
JAM
|
|
1,51
|
26.09.2024 15:10:06
|
|
|
|
ECAP 1000/63V 1625 105C WL
|
JAM
|
|
8,85
|
26.09.2024 15:10:06
|
|
|
|
ECAP 2.2/63V 0511 105C TK
|
JAM 0511R
|
|
1,01
|
26.09.2024 15:10:06
|
|
|
|
ECAP 22/63V 0511 105C
|
JAM ***
|
|
2,01
|
26.09.2024 15:10:06
|
|
|
|
ECAP 220/63V 1016 JB
|
JRB 1016R
|
|
0,90
|
26.09.2024 15:10:06
|
|
|
|
0,1mF x 63V CL21 P:5mm импорт 5% Hanway Technology 7x6x4мм металл полиэстер аналог к73-17
|
|
904
|
1,91
|
26.09.2024 15:05:14
|
|
|
|
0,18mF x 63V,К73-17,5%,95г
|
|
821
|
1,91
|
26.09.2024 15:05:14
|
|
|
|
0,22mF x 63V,5%,P:10mm,12x10x5,CL21,импорт
|
|
478
|
1,91
|
26.09.2024 15:05:14
|
|
|
|
0,22mF x 63V К73-17 20% СЗК 04-10г
|
|
1940
|
2,92
|
26.09.2024 15:05:14
|
|
|
|
0,33mF x 63V 5% импорт
|
|
494
|
1,91
|
26.09.2024 15:05:14
|
|
|
