|
2N3055 TO3 ST
|
|
43
|
25,94
|
26.04.2024 12:23:42
|
|
|
|
2N3055 TO3 TSL 97г = КТ819ГМ
|
|
70
|
18,90
|
26.04.2024 12:23:42
|
|
|
|
2N3055 TO3
|
|
3
|
15,08
|
26.04.2024 12:23:42
|
|
|
|
2N3055
|
MOS TO-3-2
|
|
11,76
|
25.04.2024 16:02:41
|
|
|
|
Транзистор 2N3055 КТ819ГМ
|
2019,Кремний
|
10
|
16,29
|
27.03.2024 15:47:28
|
|
|
|
транзистор 2N3055
|
(TOSHIBA- silicon NPN triple diffused type, TO-3)
|
12
|
5,53
|
27.03.2024 14:27:48
|
|
|
|
транзистор 2N3055
|
(silicon NPN triple diffused type, TO-3)
|
8
|
5,53
|
27.03.2024 14:27:48
|
|
|
|
транзистор 2N3055
|
(STM- silicon NPN triple diffused type, TO-3)
|
3
|
5,53
|
27.03.2024 14:27:48
|
|
|
|
2N3055
|
1989г без упак.
|
7
|
|
12.01.2024 12:12:29
|
|
|
|
2N3055
|
1986г без упак.
|
8
|
|
12.01.2024 12:12:29
|
|
|
|
2N3055
|
1986г росс
|
26
|
26,64
|
12.01.2024 12:12:29
|
|
|
|
2N3055
|
б/г TUNGSRAM корп как 2т827
|
2
|
|
12.01.2024 12:12:29
|
|
|
|
2N3055
|
без года без упак.
|
14
|
|
12.01.2024 12:12:29
|
|
|
|
2N3055B
|
1989г без упак.
|
9
|
|
12.01.2024 12:12:29
|
|
|
|
2N3055B
|
1987г без упак.
|
3
|
|
12.01.2024 12:12:29
|
|
|
|
2N3055B
|
1987г росс
|
3
|
35,19
|
12.01.2024 12:12:29
|
|
|
|
ТРАНЗИСТОРЫ * 2N3055
|
|
430
|
10,10
|
09.01.2024 12:20:08
|
|
|
|
2N3055
|
MOS TO-3-2
|
|
11,76
|
13.09.2023 15:25:19
|
|
|
|
2SD151 = 2N3055
|
|
|
|
12.09.2023 10:13:33
|
|
|
|
2N3055 TO3 ST
|
|
58
|
25,94
|
12.09.2023 10:13:33
|
|
|
