|
IRF7416TRPBF (2013г.)
|
транзистор (IR - so-8, HEXFET® Power MOSFET, VDSS = -30V, RDS(on) = 0.02 Ohm)
|
388
|
3,32
|
29.04.2026 13:59:53
|
|
|
|
IRF7416TRPBF (2017г.)
|
транзистор (Infineon - so-8, HEXFET® Power MOSFET, VDSS=-30V, RDS(on)=0.02Ohm)
|
1101
|
3,32
|
29.04.2026 13:59:53
|
|
|
|
`IRF7416T
|
2024 HXY 50
|
100
|
2090,34
|
28.04.2026 9:49:19
|
|
|
|
`IRF7416T
|
2023 HXY 50
|
350
|
2090,34
|
28.04.2026 9:49:19
|
|
|
|
`IRF7416T
|
2024 HXY 3000
|
6 000
|
2090,34
|
28.04.2026 9:49:19
|
|
|
|
`IRF7416T
|
2024 HXY 100
|
2 900
|
2090,34
|
28.04.2026 9:49:19
|
|
|
|
`IRF7416TRPBF
|
2022 Infineon Technologies 25
|
2 025
|
3,79
|
28.04.2026 9:49:19
|
|
|
|
IRF7416T
|
Транзисторы полевые
|
9050
|
1,28
|
16.01.2026 14:26:41
|
|
|
|
IRF7416TRPBF
|
Транзисторы полевые
|
2025
|
3,85
|
16.01.2026 14:26:41
|
|
|
|
IRF7416T
|
ТРАНЗИСТОРЫ
|
1750
|
1,56
|
20.01.2025 11:12:37
|
|
|
|
IRF7416TRPBF
|
ТРАНЗИСТОРЫ
|
2575
|
4,71
|
20.01.2025 11:12:37
|
|
|
