|
IRF530N (2008г.)
|
(IR - Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A,TO-220AB)
|
21
|
4,06
|
13.07.2026 10:58:09
|
|
|
|
`IRF530N
|
2024 JSMSEMI
|
1950
|
2,09
|
10.07.2026 12:34:44
|
|
|
|
`IRF530N
|
2024 JSMSEMI
|
20
|
2,09
|
10.07.2026 12:34:44
|
|
|
|
`IRF530NPBF
|
2022 Infineon Technologies
|
100
|
3,07
|
10.07.2026 12:34:44
|
|
|
|
`IRF530NPBF
|
2023 Infineon Technologies
|
1200
|
3,07
|
10.07.2026 12:34:44
|
|
|
|
`IRF530NS
|
2024 JSMSEMI
|
800
|
3,86
|
10.07.2026 12:34:44
|
|
|
|
`IRF530NS
|
2024 JSMSEMI
|
675
|
3,86
|
10.07.2026 12:34:44
|
|
|
|
`IRF530NS
|
2024 JSMSEMI
|
25
|
3,86
|
10.07.2026 12:34:44
|
|
|
|
IRF530N MOSFET N-Ch 100V 17A
|
5 IR TO-220
|
3103
|
3,05
|
10.07.2026 12:32:33
|
|
|
|
IRF530N MOSFET N-Ch 100V 17A
|
ST ТО-220
|
71
|
2,84
|
10.07.2026 12:32:33
|
|
|
|
IRF530NPBF MOSFET N-Ch 100V 17A
|
7 IR
|
50
|
3,05
|
10.07.2026 12:32:33
|
|
|
|
IRF530N TO220
|
IR
|
|
6,30
|
09.07.2026 12:38:13
|
|
|
|
IRF530N
|
TO220 IR
|
96
|
12,19
|
09.07.2026 11:22:01
|
|
|
|
IRF530N
|
TO-220 N-Channel TrenchMOS transistor VDSS=100V_Id=17 A_RDS(ON) = 110mOm
|
+
|
5,79
|
07.07.2026 10:35:26
|
|
|
|
IRF530N International Rectifier
|
|
10
|
8,13
|
06.07.2026 15:46:29
|
|
|
|
транз IRF530NPBF \N\63\TO-220\IR
|
(IRF530N) Транзисторы
|
100
|
13,71
|
06.07.2026 11:10:46
|
|
|
|
IRF530 N транзисторы Vishay/IR TO220
|
|
|
|
14.04.2026 16:28:46
|
|
|
|
IRF530 N транзисторы INFINEON TO220
|
|
|
|
14.04.2026 16:28:46
|
|
|
|
IRF530N
|
|
17
|
7,40
|
02.04.2026 13:34:31
|
|
|
|
IRF530N MOSFET N-CH 100V 17A
|
|
2327
|
4,63
|
02.04.2026 13:34:31
|
|
|
