|
IRF530N (2008г.)
|
транзистор (IR - Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A,TO-220AB)
|
21
|
6,04
|
29.04.2026 13:59:53
|
|
|
|
IRF530N
|
IR TO220
|
|
6,23
|
28.04.2026 12:23:49
|
|
|
|
IRF530N MOSFET N-Ch 100V 17A
|
05 IR TO-220 линейка 50
|
3103
|
3,02
|
28.04.2026 9:49:19
|
|
|
|
IRF530N MOSFET N-Ch 100V 17A
|
б/г ST ТО-220 лин.50
|
71
|
2,82
|
28.04.2026 9:49:19
|
|
|
|
IRF530NPBF MOSFET N-Ch 100V 17A
|
07 IR лин.50
|
50
|
3,02
|
28.04.2026 9:49:19
|
|
|
|
`IRF530N
|
2024 JSMSEMI 50
|
1 950
|
2,07
|
28.04.2026 9:49:19
|
|
|
|
`IRF530N
|
2024 JSMSEMI 20
|
20
|
2,07
|
28.04.2026 9:49:19
|
|
|
|
`IRF530NPBF
|
2022 Infineon Technologies 25
|
100
|
3,04
|
28.04.2026 9:49:19
|
|
|
|
`IRF530NPBF
|
2023 Infineon Technologies 50
|
1 200
|
3,04
|
28.04.2026 9:49:19
|
|
|
|
`IRF530NS
|
2024 JSMSEMI 800
|
800
|
3,82
|
28.04.2026 9:49:19
|
|
|
|
`IRF530NS
|
2024 JSMSEMI 25
|
675
|
3,82
|
28.04.2026 9:49:19
|
|
|
|
`IRF530NS
|
2024 JSMSEMI 5
|
25
|
3,82
|
28.04.2026 9:49:19
|
|
|
|
IRF530N
|
|
96
|
12,07
|
27.04.2026 10:34:53
|
|
|
|
транзистор IRF530N International Rectifier
|
|
10
|
15,82
|
17.04.2026 8:48:08
|
|
|
|
IRF530N
|
TO-220 N-Channel TrenchMOS transistor VDSS=100V_Id=17 A_RDS(ON) = 110mOm
|
|
5,73
|
15.04.2026 13:36:13
|
|
|
|
IRF530 N транзисторы Vishay/IR TO220
|
|
|
|
14.04.2026 16:28:46
|
|
|
|
IRF530 N транзисторы INFINEON TO220
|
|
|
|
14.04.2026 16:28:46
|
|
|
|
транз IRF530NPBF \N\63\TO-220\IR
|
(IRF530N) Транзисторы
|
100
|
15,10
|
02.04.2026 14:25:21
|
|
|
|
IRF530N
|
|
17
|
7,33
|
02.04.2026 13:34:31
|
|
|
|
IRF530N MOSFET N-CH 100V 17A
|
|
2327
|
4,58
|
02.04.2026 13:34:31
|
|
|
