|
CAY 16-330J4LF
|
б/г
|
8219
|
0,02
|
12.06.2026 10:49:22
|
|
|
|
к10-17б NPO 33пф 50в 5% 0805N330J500
|
ETHER
|
1289
|
0,14
|
11.05.2026 11:04:26
|
|
|
|
к10-17б NPO 43пф 50в 5% 0805N430J500
|
ETHER
|
3660
|
0,12
|
11.05.2026 11:04:26
|
|
|
|
0402 33пф NP0 50в 5% CL05B330JB5NNNC
|
Samsung
|
3800
|
0,02
|
11.05.2026 11:04:26
|
|
|
|
0402 43пф NP0 50в 5% CL05B430JB5NNNC
|
Samsung
|
9600
|
0,02
|
11.05.2026 11:04:26
|
|
|
|
0603 13пф NP0 50в 5% 0603CG130J500NT
|
Fenghua
|
2750
|
0,04
|
11.05.2026 11:04:26
|
|
|
|
0603 33пф NP0 50в 5% CL10C330JB8NNNC
|
Samsung
|
2576
|
0,04
|
11.05.2026 11:04:26
|
|
|
|
0603 43пф NP0 50в 5% CL10C430JB8NNNC
|
Samsung
|
3490
|
0,04
|
11.05.2026 11:04:26
|
|
|
|
0805 13пф NP0 50в 5% CL21C130JBANNNC
|
Samsung
|
3779
|
0,04
|
11.05.2026 11:04:26
|
|
|
|
0805 33пф NP0 50в 5% CL21C330JBANNNC
|
Samsung
|
1125
|
0,04
|
11.05.2026 11:04:26
|
|
|
|
0805 43пф NP0 50в 5% CL21C430JBANNNC
|
Samsung
|
1600
|
0,04
|
11.05.2026 11:04:26
|
|
|
|
1206 13пф NP0 50в 5% CL31C130JBCNNNC
|
Samsung
|
3400
|
0,09
|
11.05.2026 11:04:26
|
|
|
|
1206 33пф NP0 50в 5% 1206CG330J500NT
|
Fenghua
|
100
|
0,09
|
11.05.2026 11:04:26
|
|
|
|
1206 33пф NP0 50в 5% CL31C330JBCNNNC
|
Samsung
|
2278
|
0,09
|
11.05.2026 11:04:26
|
|
|
|
1206 43пф NP0 50в 5% TCC1206COG430J500DT
|
CCTC
|
3250
|
0,09
|
11.05.2026 11:04:26
|
|
|
|
CAY10-330J4LF
|
00:46
|
46
|
3,02
|
11.05.2026 9:34:47
|
|
|
|
Микросхема AD530JN КР525ПС2А
|
1993
|
1000
|
6,44
|
29.04.2026 14:07:34
|
|
|
|
C1206-C0G-50v-13 пФ-5% (CL31C130JBNC) (2000г.)
|
конденсатор SMD (Samsung)
|
3790
|
2758,42
|
29.04.2026 13:59:53
|
|
|
|
501CHB130JVLE (TEMEX)
|
конденсатор SMD (Chip Capacitor, Low ESR, Ultra High-Q, 13pF-5%-500V,size B)
|
500
|
5,66
|
29.04.2026 13:59:53
|
|
|
|
GT30J122
|
TOS 2-16F1A
|
|
25,04
|
28.04.2026 12:23:49
|
|
|
